Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.

Abstract: A method of forming a semiconductor device includes surrounding a dummy gate disposed over a fin with a dielectric material; forming a gate trench in the dielectric material by removing the dummy gate and by removing upper portions of a first gate spacer disposed along sidewalls of the dummy gate, the gate trench comprising a lower trench between remaining lower portions of the first gate spacer and comprising an upper trench above the lower trench; forming a gate dielectric layer, a work function layer and a glue layer successively in the gate trench; removing the glue layer and the work function layer from the upper trench; filling the gate trench with a gate electrode material after the removing; and removing the gate electrode material from the upper trench, remaining portions of the gate electrode material forming a gate electrode.

Abstract: A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; growing an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.

Abstract: The present invention provides a fabrication method for casting graphene quantum dots on LEDs and the structure thereof. A graphene and an ethanol are mixed uniformly. After the laser ablation, centrifugal purification, and molecular filtration processes, a graphene quantum dots solution is produced. Afterwards, the graphene quantum dots solution is dripped on a light-emitting surface of an LED using a drop casting method. After the ethanol evaporates by standing still, a graphene-quantum-dot-cast layer is formed. The photocarriers in the graphene-quantum-dot-cast layer generated by the illumination of the LED can flow to the light-emitting surface of the LED and thus increasing the carrier concentration and the light-emitting quantum efficiency of the LED. Thereby, enhancing the fluorescent efficiency of the LED.

Abstract: A graphene quantum dots synthesis method includes fixing a graphene aqueous solution or a graphene oxide aqueous solution on a spin coater to spin the graphene aqueous solution or the graphene oxide aqueous solution, and irradiating a pulsed laser to focus on a graphene aqueous solution or a graphene oxide aqueous solution to generate exfoliation. After a processing period, quantum dots are generated in the graphene aqueous solution or the graphene oxide aqueous solution. Since graphene aqueous solution or graphene oxide aqueous solution does not contain organic chemistry pharmacy, the quantum dots synthesized by the method of the present invention can be produced without pollution. Furthermore, the purpose of simple process, low cost, and time-saved of synthesis can be achieved.

Abstract: A graphene quantum dots synthesis method includes fixing a graphene aqueous solution or a graphene oxide aqueous solution on a spin coater to spin the graphene aqueous solution or the graphene oxide aqueous solution, and irradiating a pulsed laser to focus on a graphene aqueous solution or a graphene oxide aqueous solution to generate exfoliation. After a processing period, quantum dots are generated in the graphene aqueous solution or the graphene oxide aqueous solution. Since graphene aqueous solution or graphene oxide aqueous solution does not contain organic chemistry pharmacy, the quantum dots synthesized by the method of the present invention can be produced without pollution. Furthermore, the purpose of simple process, low cost, and time-saved of synthesis can be achieved.