Patents by Inventor TZU-NENG LIN

TZU-NENG LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996470
    Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes second spacers over the semiconductor fin. The second spacers vertically extend farther from the semiconductor fin than the first spacers. The semiconductor device includes a metal gate over the semiconductor fin, the metal gate is sandwiched by the first spacers. The metal gate includes a glue layer that contains tantalum nitride.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jian-Jou Lian, Tzu Ang Chiang, Ming-Hsi Yeh, Chun-Neng Lin, Po-Yuan Wang, Chieh-Wei Chen
  • Patent number: 11978801
    Abstract: A method of forming a semiconductor device includes surrounding a dummy gate disposed over a fin with a dielectric material; forming a gate trench in the dielectric material by removing the dummy gate and by removing upper portions of a first gate spacer disposed along sidewalls of the dummy gate, the gate trench comprising a lower trench between remaining lower portions of the first gate spacer and comprising an upper trench above the lower trench; forming a gate dielectric layer, a work function layer and a glue layer successively in the gate trench; removing the glue layer and the work function layer from the upper trench; filling the gate trench with a gate electrode material after the removing; and removing the gate electrode material from the upper trench, remaining portions of the gate electrode material forming a gate electrode.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Jou Lian, Chun-Neng Lin, Chieh-Wei Chen, Tzu-Ang Chiang, Ming-Hsi Yeh
  • Publication number: 20240105818
    Abstract: A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 28, 2024
    Inventors: Jian-Jou Lian, Chun-Neng Lin, Ming-Hsi Yeh, Chieh-Wei Chen, Tzu-Ang Chiang
  • Publication number: 20230402822
    Abstract: A manufacturing method of a semiconductor device includes: providing a semiconductor stack layer, wherein the semiconductor stack layer includes a first type semiconductor layer, a quantum well layer, and a second type semiconductor layer stacked in sequence; growing an aluminum nitride layer on the second type semiconductor layer; and annealing the aluminum nitride layer to achieve quantum well intermixing.
    Type: Application
    Filed: November 9, 2022
    Publication date: December 14, 2023
    Applicants: National Tsing Hua University, Turning Point Lasers Corporation
    Inventors: Ci-Ling Pan, Chi-Luen Wang, Hung-Sheng Lee, Li-Chang Tsou, Tzu-Neng Lin
  • Publication number: 20170338386
    Abstract: The present invention provides a fabrication method for casting graphene quantum dots on LEDs and the structure thereof. A graphene and an ethanol are mixed uniformly. After the laser ablation, centrifugal purification, and molecular filtration processes, a graphene quantum dots solution is produced. Afterwards, the graphene quantum dots solution is dripped on a light-emitting surface of an LED using a drop casting method. After the ethanol evaporates by standing still, a graphene-quantum-dot-cast layer is formed. The photocarriers in the graphene-quantum-dot-cast layer generated by the illumination of the LED can flow to the light-emitting surface of the LED and thus increasing the carrier concentration and the light-emitting quantum efficiency of the LED. Thereby, enhancing the fluorescent efficiency of the LED.
    Type: Application
    Filed: August 16, 2016
    Publication date: November 23, 2017
    Inventors: JI-LIN SHEN, TZU-NENG LIN
  • Patent number: 9725324
    Abstract: A graphene quantum dots synthesis method includes fixing a graphene aqueous solution or a graphene oxide aqueous solution on a spin coater to spin the graphene aqueous solution or the graphene oxide aqueous solution, and irradiating a pulsed laser to focus on a graphene aqueous solution or a graphene oxide aqueous solution to generate exfoliation. After a processing period, quantum dots are generated in the graphene aqueous solution or the graphene oxide aqueous solution. Since graphene aqueous solution or graphene oxide aqueous solution does not contain organic chemistry pharmacy, the quantum dots synthesized by the method of the present invention can be produced without pollution. Furthermore, the purpose of simple process, low cost, and time-saved of synthesis can be achieved.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: August 8, 2017
    Assignee: CHUNG YUAN CHRISTIAN UNIVERISTY
    Inventors: Ji-Lin Shen, Tzu-Neng Lin, Ken-Hua Chih
  • Publication number: 20160200582
    Abstract: A graphene quantum dots synthesis method includes fixing a graphene aqueous solution or a graphene oxide aqueous solution on a spin coater to spin the graphene aqueous solution or the graphene oxide aqueous solution, and irradiating a pulsed laser to focus on a graphene aqueous solution or a graphene oxide aqueous solution to generate exfoliation. After a processing period, quantum dots are generated in the graphene aqueous solution or the graphene oxide aqueous solution. Since graphene aqueous solution or graphene oxide aqueous solution does not contain organic chemistry pharmacy, the quantum dots synthesized by the method of the present invention can be produced without pollution. Furthermore, the purpose of simple process, low cost, and time-saved of synthesis can be achieved.
    Type: Application
    Filed: July 24, 2015
    Publication date: July 14, 2016
    Inventors: JI-LIN SHEN, TZU-NENG LIN, KEN-HUA CHIH