Abstract: A method for detecting defects in products from images thereof and an electronic device applying the method inputs a defect image repair data set into an autoencoder to train the autoencoder, and generates a reconstructed image, calculates a reference error value between the sample image and the reconstructed image by a preset error function, and set a threshold value based on the reference error value. The electronic device inputs an image possibly revealing a defect into the autoencoder and generates the reconstructed image corresponding to the image to be detected, and uses the preset error function to calculate the reconstruction error between the image and the reconstructed image, thereby determining whether the image being analyzed does reveal defects. When the reconstruction error is greater than the threshold value, a determination is made that a defect is revealed.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: A method for recognizing different object-categories within images based on texture classification of the different categories, which is implemented in an electronic device, includes extracting texture features from block images segmented from original images according to at least one Gabor filter; determining a grayscale level co-occurrence matrix of each block image according to the texture features; calculating texture feature statistics of each block image according to the grayscale level co-occurrence matrix; training and generating an object recognition model using the texture features and the texture feature statistics; and recognizing and classifying at least one object in original image according to the object recognition model.

Abstract: A method for detecting defects in images, is employed in a computer device, and stored in a storage medium. The method trains an autoencoder model using unblemished images, inputting an image to be detected into the autoencoder model, and obtaining a reconstructed image. An image error is calculated between the image to be detected and the reconstructed image, and the image error is inputted into a student's t-distribution and a calculation result is obtained. In response that the calculation result falls within a preset defect determination criterion range, the image to be detected is determined to be an unblemished image. In response that the calculation result does not fall within the preset defect determination criterion range, the image to be detected is determined to be a defective image. The method improves the efficiency and accuracy of defect detection.

Abstract: A product defect detection method which includes acquiring a detection image of a product to be detected is provided. The method further includes dividing the detection image into a first preset number of detection blocks. Once a detection result of each detection block is obtained by inputting each detection block into a preset defect recognition model, according to a position of each detection block in the detection image, a detection result of the product is determined according to the detection result of each detection block.

Abstract: A method for measuring a growth height of a plant, an electronic device, and a storage medium are provided. The method controls a camera device to obtain a color image and a depth image of a plant to be detected. The color image is detected by a detection model which is pre-trained, and a plurality of detection boxes which includes a plurality of plants to be detected is obtained. The color image and the depth image are aligned to create an alignment image. A plurality of target boxes is acquired from the alignment image, and depth values of the plurality of target boxes are determined. The quantity of the target boxes and a height of one or more plants to be detected are determined, no manual operations are required.

Abstract: Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Abstract: An optical member driving mechanism for connecting an optical member is provided, including a fixed portion and a first adhesive member. The fixed portion includes a first member and a second member, wherein the first member is fixedly connected to the second member via the first adhesive member.

Abstract: A method for detecting image abnormities, applied in an electronic device, and stored in a storage medium are provided, obtains images for analysis. The images are divided into a plurality of first divided images and a plurality of second divided images by reference to image size. A first abnormity score is obtained by inputting the image into a first pre-trained abnormity detection model. A plurality of second abnormity scores are obtained by inputting the first divided images into a second pre-trained abnormity detection model. A plurality of third abnormity scores are obtained by inputting the second divided images into a third pre-trained abnormity detection model. An abnormal type of the image is determined according to a preset abnormity database in response to an abnormity detected in the image, the method improves accuracy of defect detection.

Abstract: This invention relates to a process to produce an ionomer comprising: 1) contacting, in a reactor, one or more C2-C60 ?-olefins, an optional diene, and a metal alkenyl with a catalyst system comprising an activator, a catalyst compound, and a support; 2) forming a copolymer comprising one or more C2-C60 ?-olefin monomers and about 0.01 wt % to about 20 wt %, based on the weight of the copolymer, of metal alkenyl; 3) functionalizing and quenching the polymerization reaction with one or more electrophilic groups; and 4) obtaining ionomer.

Abstract: A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

Abstract: A semiconductor device includes a memory region including an array of memory cell devices, and a test region including a test memory cell structure. The test memory cell structure includes a first gate stack on a first raised portion of a substrate, a first polysilicon structure adjacent to the first raised portion and in a region between the first raised portion and a second raised portion of the substrate, a first spacer adjacent to the first polysilicon structure, and a second gate stack on the second raised portion, a second polysilicon structure adjacent to the second raised portion and in the region between the first raised portion and the second raised portion, and a second spacer adjacent to the second polysilicon structure. The semiconductor device includes an interlayer dielectric layer over at least a portion of the memory region and at least a portion of the test region.

Abstract: A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

Abstract: Vinylcyclobutane (VCB) homopolymers, VCB copolymers and processes for making same. The VCB homopolymers and copolymers have a polydispersity (PDI) of less than 3.0 and are made by contacting VCB monomer in the presence of a single-site metallocene, post metallocene, or half metallocene, and an activator, under sufficient reaction conditions to produce a VCB (co)polymer having the narrow PDI of less than 3.0. The resulting poly(vinylcyclobutane) polymers have increased crystallinity and melting point properties (Tm of 165° C. to 246° C.) that are comparable to conventional polyolefins such as polyethylene (typical Tm <135° C.) and polypropylene (typical Tm <165° C.).

Abstract: Elastomeric polyolefin-based ionomers and methods for making same. The ionomers can include a copolymer comprising: C2-C60 ?-olefin monomer units; optional C2-C60 ?-olefin comonomer units different than the monomer units; optional diene units; and about 0.1 wt % to about 20 wt % metal alkenyl units, based on the weight of the copolymer, wherein the metal alkenyl units have the formula —R(A?)—, wherein R is an alkyl group containing 2 to 10 carbon atoms, and A? is an anionic group. The copolymer can further include one or more metal cations derived from the group consisting of alkali metals, alkaline earth metals, group 3-12 metals, group 13-16 metals, and combination(s) thereof. The ionomer has a glass transition temperature of ?60° C. to 5° C., and a weight average (Mw) of 50 to 5,000 kg/mol.

Abstract: The present disclosure provides pyridyl hydroxyl amine catalyst compounds and systems containing the compounds. The present disclosure is also directed to polymerization processes to produce polyolefin polymers from catalyst systems including one or more olefin polymerization catalysts, at least one activator, and an optional support.

Abstract: This invention relates generally to olefin metathesis catalyst compounds, to the preparation of such compounds, compositions comprising such compounds, methods of using such compounds, articles of manufacture comprising such compounds, and the use of such compounds in the metathesis of olefins and olefin compounds. The invention has utility in the fields of catalysts, organic synthesis, polymer chemistry, and industrial and fine chemicals industry.

Abstract: The present disclosure relates to iron-containing compounds including a 2,6-diimino(heteroaryl) ligand useful for producing substituted-cyclo-alkanes, such as vinyl cyclobutanes. The present disclosure provides new and improved iron-containing catalysts with enhanced solubility in hydrophobic (nonpolar) solvents.

Abstract: A semiconductor device includes a memory region including an array of memory cell devices, and a test region including a test memory cell structure. The test memory cell structure includes a first gate stack on a first raised portion of a substrate, a first polysilicon structure adjacent to the first raised portion and in a region between the first raised portion and a second raised portion of the substrate, a first spacer adjacent to the first polysilicon structure, and a second gate stack on the second raised portion, a second polysilicon structure adjacent to the second raised portion and in the region between the first raised portion and the second raised portion, and a second spacer adjacent to the second polysilicon structure. The semiconductor device includes an interlayer dielectric layer over at least a portion of the memory region and at least a portion of the test region.

Abstract: A composition, including: a copolymer including units derived from ethylene, one or more ?-olefins, one or more substituted styrene compounds, and a pendant alkoxy silane group. A method was disclosed to incorporate pendant alkoxy silyl groups onto the benzylic positions. The silane-functionalized polymers show ability to cure with water. Additionally, blends of silane-functionalized polymers exhibit improved filler acceptance.