Patents by Inventor Tzu-Sheng HSIEH

Tzu-Sheng HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk acoustic wave resonator and formation method thereof
    Patent number: 11990889
    Abstract: A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: May 21, 2024
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Kuo-Lung Weng, Chia-Ta Chang, Tzu-Sheng Hsieh, Chun-Ju Wei
  • BULK ACOUSTIC WAVE RESONATOR AND FORMATION METHOD THEREOF
    Publication number: 20220209741
    Abstract: A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Inventors: Kuo-Lung WENG, Chia-Ta CHANG, Tzu-Sheng HSIEH, Chun-Ju WEI
  • Bulk acoustic wave resonator with a mass adjustment structure and its application to bulk acoustic wave filter
    Patent number: 10250228
    Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: April 2, 2019
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chih-Feng Chiang, Tzu-Sheng Hsieh
  • BULK ACOUSTIC WAVE RESONATOR WITH A MASS ADJUSTMENT STRUCTURE AND ITS APPLICATION TO BULK ACOUSTIC WAVE FILTER
    Publication number: 20180109240
    Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.
    Type: Application
    Filed: February 10, 2017
    Publication date: April 19, 2018
    Inventors: Chia-Ta CHANG, Chih-Feng CHIANG, Tzu-Sheng HSIEH