Abstract: A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Abstract: A system, a control method and an apparatus for chemical mechanical polishing (CMP) are introduced in the present application. The CMP apparatus may include a polishing pad, a first sensor, a polishing head and a condition. The polishing pad has a plurality of groves arranged randomly or in a specific pattern. The first sensor is configured to measure the pad profile of the polishing pad, where the pad profile includes the depth of each of the grooves on the polishing pad. The polishing head and the conditioner are operated according to at least one polishing condition, and the at least one polishing condition is tuned according to the pad profile.

Abstract: A system, a control method and an apparatus for chemical mechanical polishing (CMP) are introduced in the present application. The CMP apparatus may include a polishing pad, a first sensor, a polishing head and a condition. The polishing pad has a plurality of groves arranged randomly or in a specific pattern. The first sensor is configured to measure the pad profile of the polishing pad, where the pad profile includes the depth of each of the grooves on the polishing pad. The polishing head and the conditioner are operated according to at least one polishing condition, and the at least one polishing condition is tuned according to the pad profile.

Abstract: A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.

Abstract: A wafer processing apparatus includes at least one pedestal, at least one ultraviolet (UV) light source, and a window. The pedestal is configured to support a wafer. The UV light source is configured to generate UV radiation to the wafer. The window is present between the pedestal and the UV light source. The UV radiation is capable of passing through the window, and the window is a convex lens, a concave lens, or combinations thereof.

Abstract: A wafer cleaning roller including a tube body and a plurality of first protrusions is provided. The tube body has a longitudinal direction. The first protrusions are disposed on the outside surface of the tube body. Each of the first protrusions is shaped as a stripe having a first extension direction. The included angle between the first extension direction and the longitudinal direction is an oblique angle.

Abstract: A retaining ring for CMP is disclosed. The retaining ring has a plurality of grooves. The grooves have rounded sidewalls. Because the sidewalls of the grooves of the retaining ring are rounded, the slurry is not apt to accumulate around them and the pad is less scratched. Accordingly, the micro-scratches on the wafer surface are reduced and the yield of the CMP step is increased. Its operational method and application system are also disclosed in this invention.

Abstract: A membrane for vacuum suction of a silicon water typically used inside a polishing head. The membrane has a flat main body and a plurality of protrusions each having a spiny shape over the surface of the flat main body. The protrusions are formed in positions that correspond to the holes of a supporting multiple-hole panel. The protrusions on the flat main body lower the suction pressure between the wafer and the membrane somewhat so that wafer unloading failure is minimized.

Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Abstract: A membrane for vacuum suction of a silicon water typically used inside a polishing head. The membrane has a flat main body and a plurality of protrusions each having a particle-like profile over the surface of the flat main body. The protrusions are formed in positions that correspond to the holes of a supporting multiple-hole panel. The protrusions on the flat main body lower the suction pressure between the wafer and the membrane somewhat so that wafer unloading failure is minimized.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.