Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: A method for a node to issue a new block is used for a distributed system in which transactions and records are organized in block. The method comprises the steps of: determining a value R from a common reference string; computing a value s associated to a value of a status with a private key at a node, wherein the private key is a private signing key corresponding to the node, and the value s can only be computed by the node with the private key; computing a value r by taking the value s into a function H at the node, wherein the value r is unpredictable and unique to other nodes; and determining whether the node obtains a right to issue a new block by taking the values R and r into a function V.

Abstract: A coupled inductor structure applied in a first dielectric layer and a second dielectric layer disposed under the first dielectric layer includes a first inductor element disposed on the first dielectric layer and a second inductor element disposed on the second dielectric layer. The first inductor element has a first bending segment, a second bending segment connected to the first bending segment, and a third bending segment connected to the second bending segment. The second bending segment of the first inductor element has on the second dielectric layer a projection intersecting a second bending segment of the second inductor element. A relative position of the first bending segment of the first inductor element to a first bending segment of the second inductor element is opposite to another relative position of the third bending segment of the first inductor element to a third bending segment of the second inductor element.

Abstract: A coupled inductor structure applied in a first dielectric layer and a second dielectric layer disposed under the first dielectric layer includes a first inductor element disposed on the first dielectric layer and a second inductor element disposed on the second dielectric layer. The first inductor element has a first bending segment, a second bending segment connected to the first bending segment, and a third bending segment connected to the second bending segment. The second bending segment of the first inductor element has on the second dielectric layer a projection intersecting a second bending segment of the second inductor element. A relative position of the first bending segment of the first inductor element to a first bending segment of the second inductor element is opposite to another relative position of the third bending segment of the first inductor element to a third bending segment of the second inductor element.

Abstract: A coupled inductor structure applied in a first dielectric layer and a second dielectric layer disposed under the first dielectric layer includes a first inductor element disposed on the first dielectric layer and a second inductor element disposed on the second dielectric layer. The first inductor element has a first bending segment, a second bending segment connected to the first bending segment, and a third bending segment connected to the second bending segment. The second bending segment of the first inductor element has on the second dielectric layer a projection intersecting a second bending segment of the second inductor element. A relative position of the first bending segment of the first inductor element to a first bending segment of the second inductor element is opposite to another relative position of the third bending segment of the first inductor element to a third bending segment of the second inductor element.

Abstract: A coupled inductor structure applied in a first dielectric layer and a second dielectric layer disposed under the first dielectric layer includes a first inductor element disposed on the first dielectric layer and a second inductor element disposed on the second dielectric layer. The first inductor element has a first bending segment, a second bending segment connected to the first bending segment, and a third bending segment connected to the second bending segment. The second bending segment of the first inductor element has on the second dielectric layer a projection intersecting a second bending segment of the second inductor element. A relative position of the first bending segment of the first inductor element to a first bending segment of the second inductor element is opposite to another relative position of the third bending segment of the first inductor element to a third bending segment of the second inductor element.