Abstract: A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Abstract: A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.

Abstract: A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Abstract: A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes choosing a target word line among a plurality of word lines, wherein a plurality of target memory cells of the target word-line are programmed; reading the target memory cells by respectively using different X read voltage sets, so as to obtain X Gray code count deviation summations, wherein the X read voltage sets and the corresponding X Gray code count deviation summations are all ordered based on a first predefined order; and choosing one of the X read voltage sets as an optimized read voltage set according to the X Gray code count deviation summations.

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes choosing a target word line among a plurality of word lines, wherein a plurality of target memory cells of the target word-line are programmed; reading the target memory cells by respectively using different X read voltage sets, so as to obtain X Gray code count deviation summations, wherein the X read voltage sets and the corresponding X Gray code count deviation summations are all ordered based on a first predefined order; and choosing one of the X read voltage sets as an optimized read voltage set according to the X Gray code count deviation summations.

Abstract: A device and method for power loss protection in solid state drive are provided. A power loss region is created in a flash memory array and reserved as an independent storage space for storing power loss backup. When the power is interrupted, the SSD halts the operation of the host. Before the backup power is used up, the buffered data is directly written to a blank power loss block of the power loss region to form a power loss backup, and an auxiliary mark is created for confirming the most updated power loss backup. After the power is resumed, the power loss backup is directly read from the power loss region according to the most updated power loss auxiliary mark of the power loss backup to restore the original state of the SSD before the power is interrupted.

Abstract: A method of collecting a garbage block includes determining if a process of collecting the garbage block is being executed when a write command is received, copying effective pages of the garbage block to a target block in the spare area, terminating the process of collecting the garbage block, and writing data according to the write command

Abstract: Method for writing data into flash memory is disclosed. The method includes storing the frequently updated data and the not-aligned data collectively into some of the physical memory blocks of the flash memory. In other words, the method collectively writes those data into the same physical memory blocks of the flash memory as far as possible. By doing this, the invalid physical memory pages in the physical memory blocks can be generated collectively. As a result, the storage releasing efficiency of garbage collection can be greatly improved.

Abstract: The present invention discloses a control method of a multi-channel hybrid density memory storage device for access a user data. The storage device includes a plurality of low density memories (LDM) and high density memories (HDM). The steps of the method comprises: first, determining where the user data transmitted; then, using one of two error correction circuits which have different error correction capability to encode or decode the user data.

Abstract: A storage device and data processing method thereof is described. The invention provides different ECC for different memory pages. The storage device uses the long-bit ECC for easy interference page, and uses the short-bit ECC for hard interference page. Therefore, the accuracy of the data is maintained and the reading/writing speed is increased.

Abstract: An electronic storage device includes a first memory segment having at least one source block to store information, a second memory segment having at least one backup block corresponding to the source block to make a backup of the information in a LSB memory page of the source block and a control unit connecting with said first memory segment and second memory segment. The control unit reads/writes the first memory segment and second memory segment through two different signal channels respectively. The information can be simultaneously written into the first and second memory segment to get a backup of the information so that the information can be stored safely. The control unit recycles the backup block of the second memory segment not only after the source block of the first memory segment entirely finishes writing the information but also after the source block is erased up in order to release the storage space of the backup block.

Abstract: A storage device and data processing method thereof is described. The invention provides different ECC for different memory pages. The storage device uses the long-bit ECC for easy interference page, and uses the short-bit ECC for hard interference page. Therefore, the accuracy of the data is maintained and the reading/writing speed is increased.

Abstract: A storage device for connecting to a host system includes a flash memory and a controller coupled to the flash memory. The flash memory includes a plurality of memory blocks. The controller writes test data to the flash memory, and compares the test data read from the flash memory with the original test data to generate a bit error message corresponding to the flash memory. Then, the controller chooses and labels a quick read block from the plurality of memory blocks according to the bit error message, and finally writes a specific file to the quick read block.

Abstract: An electronic memory device includes a controller and a memory unit. The controller includes a micro processor, a host interface, a memory unit interface connected to the memory unit, a data cache area for provisionally storing data, an ECC unit coupled to the memory unit for testing whether there is any error bit in the data or not, and an error correcting unit coupled to the memory unit. If an error bit in the data is found and can be dealt by the ECC unit, the error bit is then directly recovered by the ECC unit. However, if the error bit exceeds beyond the processing capability of the ECC unit, the error correcting unit is selected to primarily invert predetermined data bit till the number of the error can be successfully recovered by the ECC unit.

Abstract: Method for writing data into flash memory is disclosed. The method includes storing the frequently updated data and the not-aligned data collectively into some of the physical memory blocks of the flash memory. In other words, the method collectively writes those data into the same physical memory blocks of the flash memory as far as possible. By doing this, the invalid physical memory pages in the physical memory blocks can be generated collectively. As a result, the storage releasing efficiency of garbage collection can be greatly improved.

Abstract: An electronic storage device includes a first memory segment having at least one source block to store information, a second memory segment having at least one backup block corresponding to the source block to make a backup of the information in a LSB memory page of the source block and a control unit connecting with said first memory segment and second memory segment. The control unit reads/writes the first memory segment and second memory segment through two different signal channels respectively. The information can be simultaneously written into the first and second memory segment to get a backup of the information so that the information can be stored safely. The control unit recycles the backup block of the second memory segment not only after the source block of the first memory segment entirely finishes writing the information but also after the source block is erased up in order to release the storage space of the backup block.

Abstract: A control method of a memory system for accessing an updated data between a host and the memory system is provided. The host has storage space which is divided into a plurality of logical segments to access the data. The system includes a high density memory and a low density memory, and the high density memory includes a plurality of physical segments to access the data. The control method includes the following steps: first, providing a LDM table in the memory system to indicate the allocation information of the low density memory; finally, deciding where the data is written to is according to its properties and the LDM table.

Abstract: The present invention discloses a control method of a multi-channel hybrid density memory storage device for access a user data. The storage device includes a plurality of low density memories (LDM) and high density memories (HDM). The steps of the method comprises: first, determining where the user data transmitted; then, using one of two error correction circuits which have different error correction capability to encode or decode the user data.