Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Methods and semiconductor structures are provided. A method according to the present disclosure includes receiving a workpiece that includes a first gate structure disposed over a first active region, a second gate structure disposed over a second active region, a first gate spacer extending along a sidewall of the first gate structure and disposed at least partially over a top surface of the first active region, a second gate spacer extending along a sidewall of the second gate structure and disposed at least partially over a top surface of the second active region, and a source/drain feature. The method also includes treating a portion of the first gate spacer and a portion of the second gate spacer with a remote radical of hydrogen or oxygen, removing the treated portions, and after the removal, depositing a metal fill material over the source/drain feature.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.

Abstract: A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

Abstract: A display apparatus includes a display module and a backlight module. The display module includes a substrate and a display panel. The substrate includes an image region and a control region, and the control region is located at an edge of the substrate. The display panel has a first surface and a second surface opposite to the first surface. The backlight module includes a light guide plate, a circuit board, a first light source unit and a second light source unit. The circuit board has a first portion disposed on the first surface and a second portion disposed on the second surface. The first light source unit is disposed on the first portion and provides lights to an incident surface of the light guide plate. The second light source unit is disposed on the second portion and provides lights to the control region.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.

Abstract: A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.