Abstract: Provided is a layout structure adapted for a signal format converter. The layout structure includes a first and a second capacitor array. The first capacitor array is disposed on one side of a reference axis, and includes multiple first capacitor units that form multiple first capacitors. The first capacitors respectively have multiple first capacitances. The second capacitor array is disposed on the other side of the reference axis, and includes multiple second capacitor units that form multiple second capacitors. The second capacitors respectively have multiple second capacitances. The first capacitors respectively correspond to the second capacitors. Each first capacitor and each corresponding second capacitor are symmetrical with respect to the reference axis, or each first capacitor and each corresponding second capacitor are separated from each other by the same distance. Each first capacitor and each corresponding second capacitor have the same capacitance.

Abstract: The invention provides an integrated circuit (IC) structure including a function circuit and a power ground (P/G) mesh electrically connected with the function circuit. The P/G mesh includes a first metal layer and a second metal layer. The first metal layer and the second metal layer are respectively disposed with a plurality of ground wires and a plurality of power wires. The power wires of the first metal layer are electrically connected with the power wires of the second metal layer through a plurality of first vias, and the ground wires of the first metal layer are electrically connected with the ground wires of the second metal layer through a plurality of second vias. A wire impedance of the first metal layer is different from a wire impedance of the second metal layer. The IC structure can achieve reduction of an IR-drop.

Abstract: A capacitor array structure which includes N capacitor units is provided. Each capacitor unit includes a first metal layer, a second metal layer, and a third metal layer to form an upper electrode and a lower electrode. The second metal layer is disposed between the first metal layer and the third metal layer, and includes a second patterned metal portion of the lower electrode and a first patterned metal portion of the upper electrode. disposed above. The second patterned metal portion of the lower electrode has an opening, and a side of the first patterned metal portion of the upper electrode is exposed in the opening, such that the side of the first patterned metal portion of the upper electrode is adjacent to the lower electrode of another capacitor unit.

Abstract: A capacitor array structure which includes N capacitor units is provided. Each capacitor unit includes a first metal layer, a second metal layer, and a third metal layer to form an upper electrode and a lower electrode. The second metal layer is disposed between the first metal layer and the third metal layer, and includes a second patterned metal portion of the lower electrode and a first patterned metal portion of the upper electrode. disposed above. The second patterned metal portion of the lower electrode has an opening, and a side of the first patterned metal portion of the upper electrode is exposed in the opening, such that the side of the first patterned metal portion of the upper electrode is adjacent to the lower electrode of another capacitor unit.