Abstract: An AI-assisted automatic labeling system and a method thereof are disclosed. The method comprises steps: selecting images from microscopic images as candidate images, using a pre-labeling module to automatically label cells in the candidate images, and dividing the labeled images into training data and verification data; using a training module and the training data to train a basic model; using a verification module to verify and modify the basic model, wherein the verification module respectively verifies at least one cell area and at least one background area of the verification data to converge the basic model and form an automatic labeling model; using the automatic labeling model to automatically label cells in redundant images of the microscopic images. The basic model trained by the present invention can use few labeled images to perform regressive training and verification and then automatically labels the redundant images accurately and efficiently.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: The technology is directed to cache admission control. One or more processors may categorize access requests for data items in a cache storage into a plurality of categories and collect information on the access requests over time. Based on the collected information, a utility value for caching data items in each category of the plurality of categories may be determined. Newly requested data items may be admitted into the cache storage in an order according to the corresponding utility values of their respective categories.

Abstract: The technology is directed to cache admission control. One or more processors may categorize access requests for data items in a cache storage into a plurality of categories and collect information on the access requests over time. Based on the collected information, a utility value for caching data items in each category of the plurality of categories may be determined. Newly requested data items may be admitted into the cache storage in an order according to the corresponding utility values of their respective categories.

Abstract: A body motion staff is an image constructed by encoding the member motion information which is obtained from the plural motion images taken over the motion of a multi-member body by a three-dimensional motion capturing apparatus. The member includes a link or a joint of the multi-member body.