Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A lens is formed over one or more light-emitting devices disposed over a substrate. The lens includes a trench that circumferentially surrounds the one or more light-emitting devices. The trench is filled with a phosphor-containing material.

Abstract: A lighting apparatus includes a substrate. One or more light-emitting devices are disposed over the substrate. A lens is molded over the substrate and over the one or more light-emitting devices. A recess is disposed in the lens. The recess circumferentially surrounds the one or more light-emitting devices in a top view. The recess is at least partially filled with phosphor particles.

Abstract: A lighting apparatus includes a substrate. One or more light-emitting devices are disposed over the substrate. A lens is molded over the substrate and over the one or more light-emitting devices. A recess is disposed in the lens. The recess circumferentially surrounds the one or more light-emitting devices in a top view. The recess is at least partially filled with phosphor particles.

Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

Abstract: An LED emitter uses a molded lens with phosphor material embedded in a circumferential trench to generate a batwing beam pattern. After the lens is molded over a package substrate with connected LED dies thereon, the phosphor material is molded, injected, or dispensed into a circumferential trench. The molded lens is shaped such that a majority of the light emitted by the one or more LED dies is reflected by the top surface to the side surfaces through the phosphor material.

Abstract: The present disclosure provides a method of patterning a phosphor layer on a light emitting diode (LED) emitter. The method includes providing at least one LED emitter disposed on a substrate; forming a polymer layer over the at least one LED emitter; providing a mask over the polymer layer and the at least one LED emitter; etching the polymer layer through the mask to expose the at least one LED emitter within a cavity having polymer layer walls; and coating the at least one LED emitter with phosphor.

Abstract: An LED emitter uses a molded lens with phosphor material embedded in a circumferential trench to generate a batwing beam pattern. After the lens is molded over a package substrate with connected LED dies thereon, the phosphor material is molded, injected, or dispensed into a circumferential trench. The molded lens is shaped such that a majority of the light emitted by the one or more LED dies is reflected by the top surface to the side surfaces through the phosphor material.