Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A server includes a chassis, an air duct, a sensing module and a board management controller. The air duct is disposed in the chassis. The sensing module is disposed in the chassis. The sensing module senses whether the air duct is correctly installed. The board management controller is disposed in the chassis and coupled to the sensing module. When the air duct is not correctly installed, the sensing module notifies the board management controller to generate a warning message.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

Abstract: A micro light-emitting diode (micro-LED) chip adapted to emit a red light or an infrared light is provided. The micro-LED chip includes a GaAs epitaxial structure layer, a first electrode, and a second electrode. The GaAs epitaxial structure layer includes an N-type contact layer, a tunneling junction layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type window layer along a stacking direction. The first electrode electrically contacts the N-type contact layer. The second electrode electrically contacts the N-type window layer.

Abstract: An epitaxial structure with a tunnel junction, a p-side up processing intermediate structure and a manufacturing method thereof are provided. The epitaxial structure includes: a substrate, a first n-type semiconductor layer, a tunnel junction layer, a p-type semiconductor layer, a multiple quantum well layer and a second n-type semiconductor layer, wherein the first n-type and p-type semiconductor layers and the tunnel junction layer together form a p-type semiconductor structure. The manufacturing method of the p-side up processing intermediate structure includes disposing a permanent substrate on the second n-type semiconductor layer to form a laminated structure, flipping the laminated structure upside down and removing the substrate of the epitaxial structure, thereby resulting in the p-type semiconductor structure being disposed facing up.

Abstract: A hollow target assembly has a support tube, a target body and a plurality of elastic elements. The target body includes a plurality of hollow target materials and they pass through the support tube sequentially and locate at the outer surface of the support tube. By the grooves formed and extended from an end of the inside wall of the hollow target material and the corresponding concaves formed at the outside wall of the support tube, the elastic elements can lean and be positioned in the space generated by the grooves and corresponding concaves. Therefore, the target body and the support tube are brought together closely by these elastic elements in a simple and a low-cost way.

Abstract: A method for making a refurbished sputtering target has steps of providing a spent target with a backside, an eroded side and a rim; mechanically pre-treating the backside of the spent target; applying powder material that has the same composition as the spent target to form a powder-filled layer; and sequentially pre-pressing and sintering the spent target with the powder-filled layer to obtain the refurbished sputtering target. Therefore, a percentage of the spent target is reduced by mechanically treating the backside of the spent target, so the refurbished sputtering target has a consistent quality.