Patents by Inventor Tzu-Yang Chung
Tzu-Yang Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10510527Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4 to the SPM cleaning unit via a feedback conduit.Type: GrantFiled: February 1, 2013Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang
-
Patent number: 9997384Abstract: An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.Type: GrantFiled: December 1, 2011Date of Patent: June 12, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shao-Yen Ku, Ming-Jung Chen, Tzu Yang Chung, Chi-Yun Tseng, Rui-Ping Chuang
-
Patent number: 9781994Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.Type: GrantFiled: December 7, 2012Date of Patent: October 10, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Ming-Te Chen, Chi-Fu Yu, Shao-Yen Ku, Tzu-Yang Chung, Hsiao Chien-Wen, Shan-Ching Lin
-
Patent number: 9478444Abstract: Embodiments of mechanisms for cleaning a wafer are provided. A method for cleaning a wafer includes cleaning a wafer by using a wafer scrubber and cleaning the wafer scrubber in a scrubber cleaning module. An agitated cleaning liquid is applied on the wafer scrubber to clean the wafer scrubber. The method also includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning liquid.Type: GrantFiled: July 23, 2013Date of Patent: October 25, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tai-Liang Lyu, Shao-Yen Ku, Tzu-Yang Chung, Chia-Ming Tai, Chao-Hui Kuo
-
Publication number: 20150027489Abstract: Embodiments of mechanisms for cleaning a wafer are provided. A method for cleaning a wafer includes cleaning a wafer by using a wafer scrubber and cleaning the wafer scrubber in a scrubber cleaning module. An agitated cleaning liquid is applied on the wafer scrubber to clean the wafer scrubber. The method also includes cleaning the wafer or a second wafer by the wafer scrubber after the wafer scrubber is cleaned by the agitated cleaning liquid.Type: ApplicationFiled: July 23, 2013Publication date: January 29, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Liang LYU, Shao-Yen KU, Tzu-Yang CHUNG, Chia-Ming TAI, Chao-Hui KUO
-
Publication number: 20140216500Abstract: Some embodiments relate to methods and apparatus for mitigating high metal concentrations in photoresist residue and recycling sulfuric acid (H2SO4) in single wafer cleaning tools. In some embodiments, a disclosed single wafer cleaning tool has a processing chamber that houses a semiconductor substrate. A high oxidative treatment unit may apply a high oxidative chemical pre-treatment to the semiconductor substrate to remove a photoresist residue having metal impurities from the semiconductor substrate in a manner that results in a contaminant remainder. A SPM cleaning unit apply a sulfuric-peroxide mixture (SPM) cleaning solution to the semiconductor substrate to remove the contaminant remainder from the semiconductor substrate as an SPM effluent. The SPM effluent is provided to a recycling unit configured to recover sulfuric acid (H2SO4) from the SPM effluent and to provide the recovered H2SO4to the SPM cleaning unit via a feedback conduit.Type: ApplicationFiled: February 1, 2013Publication date: August 7, 2014Applicant: Taiwan Semicunductor Manufacturing Co., Ltd.Inventors: Chien-Wen Hsiao, Shao-Yen Ku, Tzu-Yang Chung, Shang-Yuan Yu, Wagner Chang
-
Publication number: 20140158155Abstract: One or more techniques or systems for cleaning wafers during semiconductor fabrication or an associated brush are provided herein. In some embodiments, the brush includes a brush body and one or more inner hole supports within the brush body. For example, a first inner hole support and a second inner hole support define a first inner hole associated with a first size. For another example, a third inner hole support and a fourth inner hole support define a second inner hole associated with a second size different than the first size. In some embodiments, a cleaning solution is applied to a wafer based on a first flow rate at a first brush position and based on a second flow rate at a second brush position. In this manner, a flow field associated with wafer cleaning is provided, thus enhancing cleaning efficiency, for example.Type: ApplicationFiled: December 7, 2012Publication date: June 12, 2014Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Shang-Yuan Yu, Ming-Te Chen, Chi-Fu Yu, Shao-Yen Ku, Tzu-Yang Chung, Hsiao Chien-Wen, Shan-Ching Lin
-
Patent number: 6360756Abstract: A rinse tank for rinsing electronic substrates after a chemical process and a method for utilizing such rinse tank are provided. In the rinse tank, devices for performing a quick dump rinse; for performing a cascade overflow rinse and for feeding an inert gas bubbling are provided in the cavity of a single rinse tank. By utilizing the present invention novel rinse tank, the processing problems frequently observed in conventional rinse tanks where two rinse tanks are required for the quick dump rinse and for the cascade overflow rinse, such as particle re-deposition and a large floor space area requirement are eliminated. Furthermore, the wafer rinse process after a metal etching process can be accomplished in a total process time that is at least 2˜3 minutes shorter than that required by using conventional rinse tanks.Type: GrantFiled: June 3, 1999Date of Patent: March 26, 2002Assignee: Taiwan Semiconductor Manufacturing Company, LtdInventors: Chie-Chi Chen, Tzu-Yang Chung, Szu-Yao Wang, Sheng-Liang Pan