Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.

Abstract: Skates attachable to sneakers. The device includes a sneaker body and a lower functional unit (such as an ice-skate unit, a roller skate unit, etc.), assembled with or disassembled from each other. The sneaker body has a sole and a large sole under the sole, and the sole has recesses and a tenon formed in each recess, and one of the tenons has an insert hole in its sidewall. The lower functional unit has plural connect members with mortises engaging the tenons. Each connect member has a stop plate in front of the mortise, with an aperture formed between them for a safety pin and a spring fitted around the pin to fit therein. The safety pin passes through the hole of the stop plate and a lateral hole of the inner wall of the mortise, with its outer end inserting in the insert hole of the tenon.