Abstract: An autonomous mobile robot and an operating method thereof are provided. The autonomous mobile robot includes a movement module, a detection module, a control module and an interaction module. The control module includes a determination unit and a navigation unit. The determination unit determines whether there is an obstacle near or on a predetermined path of the autonomous mobile robot according to the environment information. When the obstacle is on the predetermined path, the navigation unit decides an obstacle avoidance strategy according to the environment information and the type of the obstacle. The obstacle avoidance strategy at least includes moving along a side path, stopping aside to yield, moving backward and stopping at a yielding point to yield, and detouring. When the obstacle is near or on the predetermined path, the interaction module performs an interaction action according to the obstacle avoidance strategy and the type of the obstacle.

Abstract: A caregiving robot and a caregiving system and method employing the same are provided. The caregiving robot includes a movement module, an interaction module and a control module. The interaction module receives an input instruction from the caregiver, and the input instruction includes an identity information and a target location information of the care recipient and a caregiving task information. During execution of the caregiving task, the control module controls the movement module to make the caregiving robot move to a target location according to the target location information. When the caregiving robot arrives at the target location, the control module controls the interaction module to interact with the care recipient according to the caregiving task information so as to collect health status input from the care recipient, and generates a status report accordingly. The status report includes health status information and status evaluation information of the care recipient.

Abstract: The present disclosure provides a master-slave robot arm control system and method. The control method includes steps of: (a) providing a master and a slave robot arms; (b) executing a robot arm demonstration task, wherein the step (b) includes steps of: (b1) utilizing the slave robot arm to output a force feedback; (b2) generating an action command by operating the master robot arm; (b3) calculating and generating a movement command; (b4) controlling the slave robot arm to move and to generate a movement trajectory and the force feedback correspondingly; (c) repeating the step (b) to collect a plurality of movement trajectories of the slave robot arm; (d) utilizing a statistic module to analyze the plurality of movement trajectories; (e) generating an optimized trajectory of the slave robot arm; and (f) controlling the slave robot arm to execute a robot arm task.

Abstract: The present disclosure provides a master-slave robot arm control system and method. The control method includes steps of: (a) providing a master and a slave robot arms; (b) executing a robot arm demonstration task, wherein the step (b) includes steps of: (b1) utilizing the slave robot arm to output a force feedback; (b2) generating an action command by operating the master robot arm; (b3) calculating and generating a movement command; (b4) controlling the slave robot arm to move and to generate a movement trajectory and the force feedback correspondingly; (c) repeating the step (b) to collect a plurality of movement trajectories of the slave robot arm; (d) utilizing a statistic module to analyze the plurality of movement trajectories; (e) generating an optimized trajectory of the slave robot arm; and (f) controlling the slave robot arm to execute a robot arm task.

Abstract: An electrostatic discharge protection device includes a substrate, a high-voltage N-well region, and a high-voltage P-well region. The substrate includes a first area and a second area which surrounds the first area. The first area is disposed on the high-voltage N-well region and includes a first doped region having a first conductivity type, a second doped region having a second conductivity type which surrounds the first doped region, and a third doped region having the first conductivity type which surrounds the second doped region. The second area is disposed on the high-voltage P-well region and includes a plurality of fourth doped regions having the second conductivity type and a fifth doped region having the first conductivity type. The plurality of fourth doped regions are arranged at intervals and surround the first area. The fifth doped region surrounds the first area and each of the plurality of fourth doped regions.

Abstract: An electrostatic discharge protection device includes a substrate, a high-voltage N-well region, and a high-voltage P-well region. The substrate includes a first area and a second area which surrounds the first area. The first area is disposed on the high-voltage N-well region and includes a first doped region having a first conductivity type, a second doped region having a second conductivity type which surrounds the first doped region, and a third doped region having the first conductivity type which surrounds the second doped region. The second area is disposed on the high-voltage P-well region and includes a plurality of fourth doped regions having the second conductivity type and a fifth doped region having the first conductivity type. The plurality of fourth doped regions are arranged at intervals and surround the first area. The fifth doped region surrounds the first area and each of the plurality of fourth doped regions.

Abstract: An electrostatic discharge protection device includes: a semiconductor substrate; an N-type doped well on the substrate, the N-type doped well including a first N+ region and a first P+ region; a P-type doped well on the substrate, the P-type doped well including a second N+ region, a third N+ region, and a second P+ region between the second N+ region and the third N+ region; and a first contact positioned above a surface of the N-type doped well between the first N+ region and the first P+ region.

Abstract: Methods, circuits, devices, and systems for high voltage electrostatic discharge (ESD) protection are provided. An example ESD protection device includes: a base well of a first dopant type on a substrate, a first well of the first dopant type in the base well, a second well of a second dopant type in the base well, a first highly doped region of the first dopant type and a second highly doped region of the second dopant type in the first well, a third highly doped region of the second dopant type in the second well, and a fourth highly doped region of the first dopant type in the third highly doped region. The first highly doped region and the second highly doped region are coupled to a first voltage terminal, and the third highly doped region and the fourth highly doped region are coupled to a second voltage terminal.

Abstract: An electrostatic discharge protection device includes: a semiconductor substrate; an N-type doped well on the substrate, the N-type doped well including a first N+ region and a first P+ region; a P-type doped well on the substrate, the P-type doped well including a second N+ region, a third N+ region, and a second P+ region between the second N+ region and the third N+ region; and a first contact positioned above a surface of the N-type doped well between the first N+ region and the first P+ region.

Abstract: Methods, circuits, devices, and systems for high voltage electrostatic discharge (ESD) protection are provided. An example ESD protection device includes: a base well of a first dopant type on a substrate, a first well of the first dopant type in the base well, a second well of a second dopant type in the base well, a first highly doped region of the first dopant type and a second highly doped region of the second dopant type in the first well, a third highly doped region of the second dopant type in the second well, and a fourth highly doped region of the first dopant type in the third highly doped region. The first highly doped region and the second highly doped region are coupled to a first voltage terminal, and the third highly doped region and the fourth highly doped region are coupled to a second voltage terminal.