Abstract: The current disclosure describes techniques for forming a low resistance junction between a source/drain region and a nanowire channel region in a gate-all-around FET device. A semiconductor structure includes a substrate, multiple separate semiconductor nanowire strips vertically stacked over the substrate, a semiconductor epitaxy region adjacent to and laterally contacting each of the multiple separate semiconductor nanowire strips, a gate structure at least partially over the multiple separate semiconductor nanowire strips, and a dielectric structure laterally positioned between the semiconductor epitaxy region and the gate structure. The first dielectric structure has a hat-shaped profile.

Abstract: The present invention relates to a structure analyzing method. The method includes dividing a physical structure into a plurality of virtual elements in accordance with a structural geometry of the physical structure and establishing a discrete increment secant iterative model including an equivalent nodal secant mass coefficient and an equivalent nodal secant mass damping coefficient; implementing an increment-secant iterative algorithm to repeatedly compute until convergence a secant mass coefficient slope corresponding to the equivalent nodal secant mass coefficient and a secant mass damping coefficient slope corresponding to the equivalent nodal secant mass damping coefficient; and replacing the equivalent nodal secant mass coefficient and the equivalent nodal secant mass damping coefficient by the converged secant mass coefficient slope and the converged secant mass damping coefficient slope respectively.

Abstract: The present invention relates to a structure analyzing method, characterized in that a computer is configured to execute a process, including steps of establishing a spatial-temporal discrete governing model for a discontinuous nonlinear structure based on a finite element analysis, in which the spatial-temporal discrete governing model includes an equivalent nodal secant damping coefficient and an equivalent nodal secant stiffness coefficient at current time step; repeatedly calculating until convergence a secant damping coefficient slope and a secant stiffness coefficient slope based on known parameters, the known equivalent nodal secant damping coefficient and the known equivalent nodal secant stiffness coefficient at previous time step through a computer iteration algorithm; and replacing the equivalent nodal secant damping coefficient and the equivalent nodal secant stiffness coefficient by the converged secant damping coefficient slope and the converged secant stiffness coefficient slope acting as initi