Patents by Inventor Tzu-Ying Yen

Tzu-Ying Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7341879
    Abstract: A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.
    Type: Grant
    Filed: July 7, 2006
    Date of Patent: March 11, 2008
    Assignee: Epistar Corporation
    Inventors: Tzu-Ying Yen, Han-Tsun Lai, Jen-Chau Wu, Chung-Cheng Tu
  • Publication number: 20060249740
    Abstract: A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.
    Type: Application
    Filed: July 7, 2006
    Publication date: November 9, 2006
    Inventors: Tzu-Ying Yen, Han-Tsun Lai, Jen-Chau Wu, Chung-Cheng Tu
  • Patent number: 7109525
    Abstract: A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.
    Type: Grant
    Filed: December 10, 2004
    Date of Patent: September 19, 2006
    Assignee: Epistar Corporation
    Inventors: Tzu-Ying Yen, Han-Tsun Lai, Jen-Chau Wu, Chung-Cheng Tu
  • Publication number: 20060079013
    Abstract: A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.
    Type: Application
    Filed: December 10, 2004
    Publication date: April 13, 2006
    Inventors: Tzu-Ying Yen, Han-Tsun Lai, Jen-Chau Wu, Chung-Cheng Tu