Abstract: A light emitting diode structure including a light emitting device layer, a patterned dielectric layer, a first ohmic contact layer, a conductive layer, a first electrode layer and a second electrode layer is provided. The light emitting device layer has a first surface and a second surface opposite to the first surface. The patterned dielectric layer disposed on the first surface has a plurality of openings exposing a portion of the light emitting device layer. The first ohmic contact layer is disposed on the patterned dielectric layer and connected with the first light emitting device layer through the openings. The conductive layer is disposed on the first ohmic contact layer. The first electrode layer is disposed on the conductive layer, and the conductive layer is located between the first ohmic contact layer and the second electrode layer. A fabrication method of the light emitting diode structure is also provided.

Abstract: A semiconductor structure is first provided. The semiconductor structure includes a sapphire substrate and a semiconductor light-emitting layer. A first surface of the semiconductor light-emitting layer covers and contacts with the sapphire substrate. Then, the semiconductor structure is fixed on a supported base. The sapphire substrate is further removed from the semiconductor structure. After that, a high heat-conductive layer is formed on the first surface of the semiconductor light-emitting layer to form a light-emitting diode. Finally, the supported base is separated from the light-emitting diode.