Abstract: An auxiliary device for muscle strength training is provided, which includes: a base; a sliding member slidingly coupled to the base; and a connecting-rod mechanism connected to the base and the sliding member in such a way that a positional shift of the sliding member allows the connecting-rod mechanism to rotate relative to the base and change its state. As such, the auxiliary device has first and second configurations to assist patients who are incapable of controlling their muscles by themselves to effectively train specific muscle groups. Further, elastic members are connected to the base and the connecting-rod mechanism and provide elastic potential energies so as to keep the auxiliary device in static equilibrium. The auxiliary device has a simple structure and is easily manufactured at a low cost and applicable for patients with muscle strength lower than grade 3.

Abstract: An auxiliary device for muscle strength training is provided, which includes: a base; a sliding member slidingly coupled to the base; and a connecting-rod mechanism connected to the base and the sliding member in such a way that a positional shift of the sliding member allows the connecting-rod mechanism to rotate relative to the base and change its state. As such, the auxiliary device has first and second configurations to assist patients who are incapable of controlling their muscles by themselves to effectively train specific muscle groups. Further, elastic members are connected to the base and the connecting-rod mechanism and provide elastic potential energies so as to keep the auxiliary device in static equilibrium. The auxiliary device has a simple structure and is easily manufactured at a low cost and applicable for patients with muscle strength lower than grade 3.

Abstract: A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

Abstract: A method for fabricating a semiconductor device is provided, wherein the method comprises steps as follows: A first conductive-type metal-oxide-semiconductor transistor and a second conductive-type metal-oxide-semiconductor transistor are firstly formed on a substrate. Subsequently, a first stress-inducing dielectric layer and a first capping layer are formed in sequence on the first conductive-type metal-oxide-semiconductor transistor; and then a second stress-inducing dielectric layer and a second capping layer are formed in sequence on the second conductive-type metal-oxide-semiconductor transistor. Next, the fist capping layer is removed.

Abstract: A CMP apparatus therefor is provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

Abstract: An apparatus of chemical mechanical polishing has a polishing machine, a first thickness metrology and a second thickness metrology. The first thickness metrology is connected with the polishing machine, and the second thickness metrology is connected with the polishing machine. Since the thickness of the first material layer and the second material layer after polishing process can be separately measured by the first thickness metrology and the second thickness metrology in-situ, the difference of film thickness between wafers can be reduced.

Abstract: A CMP process and a CMP apparatus therefor are provided. First, a substrate including a semiconductor structure, a liner layer over the semiconductor structure and a metal layer over the liner layer is provided. Next, a metal polishing step is performed to polish the metal layer until a portion of the liner layer is exposed. Next, a buffing step is performed to remove any contaminants from the surface of the metal layer. Thereafter, a liner CMP step is performed to polish the liner layer.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.

Abstract: A CMP slurry delivery system includes a delivery pipe, a first slurry supply reservoir coupled to the delivery pipe for supplying an abrasive, a second slurry supply reservoir coupled to the delivery pipe for supplying a clean chemical, a third slurry supply reservoir coupled to the delivery pipe for supplying a corrosion inhibitor, and a fourth slurry supply reservoir for supplying an oxidizer.