Abstract: The invention presents a rectifier circuit and a rectification method for harvesting light energy and RF energy, which uses light energy receiver to convert light energy into input direct-current voltage and RF energy receiver to convert RF energy into RF voltage simultaneously. Also, by combining with injection-locked oscillating circuit, oscillating frequency of injection-locked oscillating circuit is locked according to RF frequency also amplitude of RF voltage is enhanced. By using rectifier circuit to rectify and output corresponding output direct-current voltage, both light energy and RF energy may be harvested simultaneously and energy conversion efficiency is enhanced.

Abstract: A radio frequency energy-harvesting apparatus is applied to a radio frequency energy-transmitting apparatus with a location detection function. The radio frequency energy-harvesting apparatus includes a direct current signal receiving-processing unit, a rectification and harmonic generation unit, and a radar wave receiving-transmitting unit. The rectification and harmonic generation unit is electrically connected to the direct current signal receiving-processing unit. The radar wave receiving-transmitting unit is electrically connected to the rectification and harmonic generation unit.

Abstract: An RF energy transmitting apparatus with positioning and polarization tracing function is used for an RF energy harvesting apparatus. The RF energy transmitting apparatus includes a power radar transmitter and a radar controller. The power radar transmitter receives a power source signal and emits an electromagnetic source wave. The radar controller is electrically connected to power radar transmitter and receives a reflected harmonic wave. The power radar transmitter emits the electromagnetic source wave to scan a space. The RF energy harvesting apparatus generates and emits the reflected harmonic wave. The radar controller determines a position and a polarization angle of the RF energy harvesting apparatus after receiving the reflected harmonic wave and to adjust a polarization angle of the power radar transmitter to be within a predetermined angle range with respect to the polarization angle of the reflected harmonic wave sent from the RF energy harvesting apparatus.

Abstract: An RF energy transmitting apparatus with positioning and polarization tracing function is used for an RF energy harvesting apparatus. The RF energy transmitting apparatus includes a power radar transmitter and a radar controller. The power radar transmitter receives a power source signal and emits an electromagnetic source wave. The radar controller is electrically connected to power radar transmitter and receives a reflected harmonic wave. The power radar transmitter emits the electromagnetic source wave to scan a space. The RF energy harvesting apparatus generates and emits the reflected harmonic wave. The radar controller determines a position and a polarization angle of the RF energy harvesting apparatus after receiving the reflected harmonic wave and to adjust a polarization angle of the power radar transmitter to be within a predetermined angle range with respect to the polarization angle of the reflected harmonic wave sent from the RF energy harvesting apparatus.

Abstract: An RF energy transmitting apparatus is applied to an RF energy harvesting apparatus, the RF energy transmitting apparatus includes: a power radar transmitter receiving a power source signal and emits an electromagnetic source wave. A radar controller is electrically connected to the power radar transmitter and receives a reflected harmonic wave. After receiving the electromagnetic source wave, the RF energy harvesting apparatus generates and emits the reflected harmonic wave. After the radar controller receives the reflected harmonic wave, the radar controller determines a polarization angle of a reflection signal from the RF energy harvesting apparatus, and the radar controller adjusts the polarization angle of the antenna of the power radar transmitter to be within a predetermined range around the polarization angle of the reflected harmonic signal from the RF energy harvesting apparatus for an optimal received power.

Abstract: A radio frequency energy-harvesting apparatus is applied to a radio frequency energy-transmitting apparatus with a location detection function. The radio frequency energy-harvesting apparatus includes a direct current signal receiving-processing unit, a rectification and harmonic generation unit, and a radar wave receiving-transmitting unit. The rectification and harmonic generation unit is electrically connected to the direct current signal receiving-processing unit. The radar wave receiving-transmitting unit is electrically connected to the rectification and harmonic generation unit.

Abstract: An RF energy transmitting apparatus is applied to an RF energy harvesting apparatus, the RF energy transmitting apparatus includes: a power radar transmitter receiving a power source signal and emits an electromagnetic source wave. A radar controller is electrically connected to the power radar transmitter and receives a reflected harmonic wave. After receiving the electromagnetic source wave, the RF energy harvesting apparatus generates and emits the reflected harmonic wave. After the radar controller receives the reflected harmonic wave, the radar controller determines a polarization angle of a reflection signal from the RF energy harvesting apparatus, and the radar controller adjusts the polarization angle of the antenna of the power radar transmitter to be within a predetermined range around the polarization angle of the reflected harmonic signal from the RF energy harvesting apparatus for an optimal received power.

Abstract: A radio frequency energy-transmitting apparatus includes a harmonic radar unit and a harmonic radar control unit. The harmonic radar unit transmits a radar wave with a fundamental frequency. After a radio frequency energy-harvesting apparatus receives the radar wave, the radio frequency energy-harvesting apparatus generates and transmits a radar reflection harmonic wave. A frequency of the radar reflection harmonic wave is a multiple frequency of the radar wave. After the harmonic radar unit receives the radar reflection harmonic wave, the harmonic radar control unit determines a location of the radio frequency energy-harvesting apparatus. According to the location of the radio frequency energy-harvesting apparatus, the harmonic radar control unit controls the harmonic radar unit, so that a radar wave beam of the radar wave transmitted from the harmonic radar unit is directed toward the location of the radio frequency energy-harvesting apparatus.

Abstract: A wireless intraocular pressure monitoring device includes reflecting and detecting modules. The reflecting module includes a soft contact lens having a curvature corresponding to that of a cornea while worn. A metal layer is embedded in and deformable with the soft contact lens. The detecting module includes two waveguides, an oscillator, and a converting unit. The oscillator is operable to generate oscillation signals having a frequency dependent on an equivalent impedance of the waveguides such that the equivalent impedance corresponds to intraocular pressure. The converting unit is operable for receiving and converting the oscillation signals into an output signal corresponding to the intraocular pressure.

Abstract: A wireless intraocular pressure monitoring device includes reflecting and detecting modules. The reflecting module includes a soft contact lens having a curvature corresponding to that of a cornea while worn. A metal layer is embedded in and deformable with the soft contact lens. The detecting module includes two waveguides, an oscillator, and a converting unit. The oscillator is operable to generate oscillation signals having a frequency dependent on an equivalent impedance of the waveguides such that the equivalent impedance corresponds to intraocular pressure. The converting unit is operable for receiving and converting the oscillation signals into an output signal corresponding to the intraocular pressure.

Abstract: A frequency synthesizer and a method thereof. The method comprises grouping the carrier frequencies into first through fifth frequency groups comprising the first to third frequencies, the fourth to sixth frequencies, the seventh to ninth frequencies, the tenth to twelfth frequencies, and the thirteenth to fourteenth frequencies, generating a center frequency of the third frequency group, frequency mixing the center frequency of the third frequency group to produce center frequencies of the first, second, fourth, and fifth frequency groups, and performing frequency mixing on the center frequencies of the first through fifth frequency groups to produce two adjacent frequencies for each center frequency.

Abstract: A frequency synthesizer and a method thereof. The method comprises grouping the carrier frequencies into first through fifth frequency groups comprising the first to third frequencies, the fourth to sixth frequencies, the seventh to ninth frequencies, the tenth to twelfth frequencies, and the thirteenth to fourteenth frequencies, generating a center frequency of the third frequency group, frequency mixing the center frequency of the third frequency group to produce center frequencies of the first, second, fourth, and fifth frequency groups, and performing frequency mixing on the center frequencies of the first through fifth frequency groups to produce two adjacent frequencies for each center frequency.

Abstract: A voltage controlled oscillator (VCO) has an LC tank for generating a sinusoidal wave. The VCO uses a positive feedback circuit electrically connected to the LC tank for amplifying the sinusoidal wave. In addition, the VCO includes a noise reducing circuit having a T-shaped resistor configuration connected to the positive feedback circuit. The use of the T-shaped resistor configuration allows the VCO to reduce phase noise generated by the LC tank, and provide a high SNR.

Abstract: A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line.

Abstract: A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an adhesion layer 130 composed of poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line.

Abstract: A voltage controlled oscillator (VCO) has an LC tank for generating a sinusoidal wave. The VCO uses a positive feedback circuit electrically connected to the LC tank for amplifying the sinusoidal wave. In addition, the VCO includes a noise reducing circuit having a T-shaped resistor configuration connected to the positive feedback circuit. The use of the T-shaped resistor configuration allows the VCO to reduce phase noise generated by the LC tank, and provide a high SNR.

Abstract: A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line.

Abstract: A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line.

Abstract: A quadrature oscillator for generating quadrature and differential double-frequency signals is disclosed. This oscillator is formed by PMOS and NMOS transistors, complementary devices, etc. The circuit is designed by using the differential circuit structures, two LC tanks and the technology of current reuse. As the current pass through most devices and selectively coupling the specific terminals, therefore, it has advantages of less area requirement in circuit design, low power dissipation and low phase noise of output.

Abstract: A method with three embodiments of manufacturing metal lines and solder bumps using electroless deposition techniques. The first embodiment uses a PdSix seed layer 50 for electroless deposition. The PdSix layer 50 does not require activation. A metal line is formed on a barrier layer 20 and an adhesion layer 30. A Palladium silicide seed layer 50 is then formed and patterned. Ni, Pd or Cu is electroless deposited over the Palladium silicide layer 50 to form a metal line. The second embodiment selectively electrolessly deposits metal 140 over an Adhesion layer 130 composed of Poly Si, Al, or Ti. A photoresist pattern 132 is formed over the adhesion layer. A metal layer 140 of Cu or Ni is electrolessly deposited over the adhesion layer. The photoresist layer 132 is removed and the exposed portion of the adhesion layer 130 and the underlying barrier metal layer 120 are etched thereby forming a metal line.