Patents by Inventor Tzuhn-Yan Lin

Tzuhn-Yan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silane guanidinate derivatives useful for low temperature deposition of silicon-containing materials
    Patent number: 10280186
    Abstract: A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400° C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: May 7, 2019
    Assignees: JIANGSU NATA OPTO-ELECTRONIC MATERIAL CO., LTD, JIANGNAN UNIVERSITY
    Inventors: Xiao Ma, Chongying Xu, Tzuhn-Yan Lin, Dongsheng Xu, Yuqiang Ding