Patents by Inventor Tzu Lin Yang

Tzu Lin Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145498
    Abstract: Some embodiments relate to an integrated chip including a substrate having a first side and a second side opposite the first side. The integrated chip further includes a first photodetector positioned in a first pixel region within the substrate. A floating diffusion region with a first doping concentration of a first polarity is positioned on the first side of the substrate in the first pixel region. A first body contact region with a second doping concentration of a second polarity different from the first polarity is positioned on the second side of the substrate in the first pixel region.
    Type: Application
    Filed: January 4, 2023
    Publication date: May 2, 2024
    Inventors: Hao-Lin Yang, Fu-Sheng Kuo, Ching-Chun Wang, Hsiao-Hui Tseng, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240128216
    Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 18, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Ching-Chun Wang, Hsiao-Hui Tseng, Chen-Jong Wang, Dun-Nian Yaung
  • Patent number: 11961912
    Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.
    Type: Grant
    Filed: June 6, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-An Lin, Wei-Yuan Lu, Feng-Cheng Yang, Tzu-Ching Lin, Li-Li Su
  • Patent number: 11955960
    Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: April 9, 2024
    Assignee: CHIP-GAN POWER SEMICONDUCTOR CORPORATION
    Inventors: Ke-Horng Chen, Tzu-Hsien Yang, Yong-Hwa Wen, Kuo-Lin Cheng
  • Publication number: 20240096918
    Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 21, 2024
    Inventors: Hao-Lin Yang, Tzu-Jui Wang, Wei-Cheng Hsu, Cheng-Jong Wang, Dun-Nian Yuang, Kuan-Chieh Huang
  • Publication number: 20240079434
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 7, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung, Yu-Chun Chen
  • Publication number: 20240072790
    Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.
    Type: Application
    Filed: August 23, 2022
    Publication date: February 29, 2024
    Inventors: KE-HORNG CHEN, TZU-HSIEN YANG, YONG-HWA WEN, KUO-LIN CHENG
  • Patent number: 11311197
    Abstract: An article for detecting physiological function and posture status is disclosed. The article touches body directly or indirectly; wherein at least a group of non-posture physiological sensors are configured on this object and at least a switch, tension sensor, pressure sensor or pressure applicator are coupled with or touch this object; the switch, tension sensor, pressure sensor or pressure applicator are configured on a different or the same object with the physiological sensors, or divided into two parts that contact each other while external force applied; the non-posture physiological sensors sense the physiological function and posture status of the user.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: April 26, 2022
    Assignee: MINGYOUNG BIOMEDICAL CORP.
    Inventors: Chang-Ming Yang, Tzu-Lin Yang, Hao Yang
  • Patent number: 8961439
    Abstract: A system for analyzing gait using textile sensors is disclosed. A system includes a sock sensing system, which comprises a sock and at least one switch, tension sensor, or pressure sensor for sensing a posture or movement; and a processor configured to receive signals from the sock sensing system and to analyze a gait parameter, wherein the processor is configured to calculate the gait parameter using a signal from the sock sensing system as a trigger point.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: February 24, 2015
    Assignee: Ming Young Biomedical Corp.
    Inventors: Chang-Ming Yang, Tzu Lin Yang, Ching Wen Yang, Hao Yang
  • Publication number: 20120253234
    Abstract: A system for analyzing gait using textile sensors is disclosed. A system includes a sock sensing system, which comprises a sock and at least one switch, tension sensor, or pressure sensor for sensing a posture or movement; and a processor configured to receive signals from the sock sensing system and to analyze a gait parameter, wherein the processor is configured to calculate the gait parameter using a signal from the sock sensing system as a trigger point.
    Type: Application
    Filed: March 5, 2012
    Publication date: October 4, 2012
    Applicant: MING YOUNG BIOMEDICAL CORP.
    Inventors: Chang-Ming Yang, Tzu Lin Yang, Ching Wen Yang, Hao Yang
  • Publication number: 20120215076
    Abstract: An article for detecting physiological function and posture status is disclosed. The article touches body directly or indirectly; wherein at least a group of non-posture physiological sensors are configured on this object and at least a switch, tension sensor, pressure sensor or pressure applicator are coupled with or touch this object; the switch, tension sensor, pressure sensor or pressure applicator are configured on a different or the same object with the physiological sensors, or divided into two parts that contact each other while external force applied; the non-posture physiological sensors sense the physiological function and posture status of the user.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 23, 2012
    Applicant: MING YOUNG BIOMEDICAL CORP.
    Inventors: Chang-Ming Yang, Tzu-Lin Yang, Hao Yang
  • Patent number: 8193465
    Abstract: An electronic device which includes a resilient piece, base plate and electronic source. The upper conductor is located on the resilient piece; the base plate is connected to the resilient piece, with a space between the two. The lower conductor is located on the base plate, and there is a crevice between the lower conductor and the upper conductor. The electronic source electrically connected to the upper conductor and the lower conductor. The sensor device is located on the base plate. Utilizing this structure, the electronic device can, based on the user's needs, perform testing of the subject's physiological status or test a specific site that is pressed, be used as assist for medical equipment, exercise equipment or communications facilities.
    Type: Grant
    Filed: March 22, 2008
    Date of Patent: June 5, 2012
    Inventors: Chang Ming Yang, Tzu Lin Yang, Ching Wen Yang, Hao Yang
  • Publication number: 20080230363
    Abstract: An electronic device which includes a resilient piece, base plate and electronic source. The upper conductor is located on the resilient piece; the base plate is connected to the resilient piece, with a space between the two. The lower conductor is located on the base plate, and there is a crevice between the lower conductor and the upper conductor. The electronic source electrically connected to the upper conductor and the lower conductor. The sensor device is located on the base plate. Utilizing this structure, the electronic device can, based on the user's needs, perform testing of the subject's physiological status or test a specific site that is pressed, be used as assist for medical equipment, exercise equipment or communications facilities.
    Type: Application
    Filed: March 22, 2008
    Publication date: September 25, 2008
    Inventors: Chang Ming Yang, Tzu Lin Yang, Ching Wen Yang, Hao Yang
  • Publication number: 20040127817
    Abstract: A blood collection set comprises essentially a syringe, a syringe cover, a flexible tube and a test tube, wherein on the top of said syringe body, there is provided protrudingly with one or more fasteners; and wherein, on the syringe cover, there are provided with several gliding slots corresponding to the number and positions of said fasteners on said syringe, wherein, on both of the front and rear ends of said gliding slots, a protruding button is provided convex in a manner that a fastening portion is formed on the front end and the rear end of said gliding slots, respectively, and wherein the base of the syringe cover is flat and is engaged with said lateral pieces of the syringe; wherein the front end of the flexible tube is connected with the rear end of the syringe, while a plastic needle is provided on the rear end of said flexible tube; and wherein an interposing structure is provided by sleeving on said flexible tube.
    Type: Application
    Filed: December 27, 2002
    Publication date: July 1, 2004
    Inventors: Chang-Ming Yang, Tzu-Lin Yang