Patents by Inventor Tzung-Fang Guo
Tzung-Fang Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10497882Abstract: A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.Type: GrantFiled: May 8, 2017Date of Patent: December 3, 2019Assignee: National Cheng Kung UniversityInventor: Tzung-fang Guo
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Patent number: 10410797Abstract: A method for fabricating a solar cell is provided and has steps of: providing a transparent conductive substrate; forming a porous supporting layer on the transparent conductive substrate; forming a porous conductive counter electrode layer on the porous supporting layer, where the porous conductive counter electrode layer includes a carrier blocking layer and a conductive layer, and the carrier blocking layer is between the porous supporting layer and the conductive layer; and providing a light-absorbing material penetrating from the porous conductive counter electrode layer. The light-absorbing material fills within the porous supporting layer through a plurality of pores in the porous conductive counter electrode layer.Type: GrantFiled: September 15, 2017Date of Patent: September 10, 2019Assignee: NATIONAL CHENG KUNG UNIVERSITYInventors: Chao-Yu Chen, Tzung-Fang Guo, Wei-Chih Lai
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Publication number: 20180350529Abstract: A method for fabricating a solar cell is provided and has steps of: providing a transparent conductive substrate; forming a porous supporting layer on the transparent conductive substrate; forming a porous conductive counter electrode layer on the porous supporting layer, where the porous conductive counter electrode layer includes a carrier blocking layer and a conductive layer, and the carrier blocking layer is between the porous supporting layer and the conductive layer; and providing a light-absorbing material penetrating from the porous conductive counter electrode layer. The light-absorbing material fills within the porous supporting layer through a plurality of pores in the porous conductive counter electrode layer.Type: ApplicationFiled: September 15, 2017Publication date: December 6, 2018Inventors: Chao-Yu CHEN, Tzung-Fang GUO, Wei-Chih LAI
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Publication number: 20180033976Abstract: A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.Type: ApplicationFiled: May 8, 2017Publication date: February 1, 2018Inventor: Tzung-fang GUO
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Publication number: 20170229250Abstract: A perovskite solar cell is provided with a perovskite material layer having a first surface and a second surface opposite to the first surface; an electron transport layer disposed on the first surface; and a gold-nickel oxide layer disposed on the second surface. Furthermore, a manufacturing method of the perovskite solar cell is disclosed with steps of providing a transparent substrate; forming a gold-nickel oxide layer on the transparent substrate; and forming a perovskite material layer on the gold-nickel oxide layer.Type: ApplicationFiled: August 24, 2016Publication date: August 10, 2017Applicant: National Cheng Kung UniversityInventors: Tzung-Fang Guo, Wei-Chih Lai
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Publication number: 20160005986Abstract: A solar cell is provided, and has an organic light-absorbing layer having a perovskite structure, and a hole transport layer disposed on a first surface of the organic light-absorbing layer. The hole transport layer is made of a nickel oxide. A method of manufacturing a solar cell is provided, and has the steps of (1) providing a hole transport layer which is made of a nickel oxide; (2) forming an organic light-absorbing layer having a perovskite structure, which has a first surface on which the hole transporting layer is disposed, and a second surface opposite to the first surface; and (3) forming an electron transport layer on the second surface of the organic light-absorbing layer.Type: ApplicationFiled: November 6, 2014Publication date: January 7, 2016Inventors: Tzung-Fang Guo, Chao-Yu Chen
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Patent number: 9082992Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.Type: GrantFiled: July 21, 2013Date of Patent: July 14, 2015Assignee: NATIONAL CHENG KUNG UNIVERSITYInventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
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Publication number: 20140332078Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.Type: ApplicationFiled: July 21, 2013Publication date: November 13, 2014Applicant: National Cheng Kung UniversityInventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
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Patent number: 8692235Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.Type: GrantFiled: March 18, 2011Date of Patent: April 8, 2014Assignee: National Cheng Kung UniversityInventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li
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Patent number: 8618534Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.Type: GrantFiled: February 7, 2012Date of Patent: December 31, 2013Assignee: National Cheng Kung UniversityInventors: Tzung-Fang Guo, Jer-Wei Chang, Ten-Chin Wen
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Publication number: 20130112967Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.Type: ApplicationFiled: February 7, 2012Publication date: May 9, 2013Applicant: National Cheng Kung UniversityInventors: Tzung-Fang Guo, Jer-Wei Chang, Ten-Chin Wen
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Patent number: 8350243Abstract: An optically-induced dielectrophoresis chip including a substrate, a first electrode layer disposed on the substrate, and an interface modification layer disposed on the first electrode layer. A photo-conductive layer is disposed on the interface modification layer and includes an optical absorbent polymeric material. A barrier layer is disposed on the photo-conductive layer, and a compartment forming layer is disposed on the barrier layer defining a compartment. A second electrode layer covers the compartment forming layer.Type: GrantFiled: August 27, 2009Date of Patent: January 8, 2013Assignee: National Cheng Kung UniversityInventors: Gwo-Bin Lee, Tzung-Fang Guo, Wei Wang, Yen-Heng Lin
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Publication number: 20110227047Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.Type: ApplicationFiled: March 18, 2011Publication date: September 22, 2011Applicant: National Cheng Kung UniversityInventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li
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Publication number: 20100051465Abstract: An optically-induced dielectrophoresis chip includes a substrate, a first electrode layer disposed on the substrate, an interface modification layer disposed on the first electrode layer, a photo-conductive layer disposed on the interface modification layer and including an optical absorbent polymeric material, a barrier layer disposed on the photo-conductive layer, a compartment forming layer disposed on the barrier layer and defining a compartment, and a second electrode layer covering the compartment forming layer.Type: ApplicationFiled: August 27, 2009Publication date: March 4, 2010Inventors: Gwo-Bin Lee, Tzung-Fang Guo, Wei Wang, Yen-Heng Lin
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Publication number: 20070031700Abstract: An organic light emitting diode (OLED) includes a substrate, a first electrode layer, an organic emitting layer, a second electrode layer, and an electron injection layer, in which the electron injection layer is selected from an electron injection layer made from organic molecules, an electron injection layer with nano-grade thickness, or an electron injection layer having dipole moment organic molecules with nano-grade thickness. By utilizing the conformation of the electron injection layer, an OLED having stable operation can be achieved.Type: ApplicationFiled: August 2, 2006Publication date: February 8, 2007Inventors: Tzung-Fang Guo, Fuh-Shun Yang, Ten-Chin Wen, Yaw-Shyan Fu, Ruey-Min Chen, Chia-Tin Chung, Chin-In Wu