Patents by Inventor Tzung-Fang Guo

Tzung-Fang Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10497882
    Abstract: A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: December 3, 2019
    Assignee: National Cheng Kung University
    Inventor: Tzung-fang Guo
  • Patent number: 10410797
    Abstract: A method for fabricating a solar cell is provided and has steps of: providing a transparent conductive substrate; forming a porous supporting layer on the transparent conductive substrate; forming a porous conductive counter electrode layer on the porous supporting layer, where the porous conductive counter electrode layer includes a carrier blocking layer and a conductive layer, and the carrier blocking layer is between the porous supporting layer and the conductive layer; and providing a light-absorbing material penetrating from the porous conductive counter electrode layer. The light-absorbing material fills within the porous supporting layer through a plurality of pores in the porous conductive counter electrode layer.
    Type: Grant
    Filed: September 15, 2017
    Date of Patent: September 10, 2019
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Chao-Yu Chen, Tzung-Fang Guo, Wei-Chih Lai
  • Publication number: 20180350529
    Abstract: A method for fabricating a solar cell is provided and has steps of: providing a transparent conductive substrate; forming a porous supporting layer on the transparent conductive substrate; forming a porous conductive counter electrode layer on the porous supporting layer, where the porous conductive counter electrode layer includes a carrier blocking layer and a conductive layer, and the carrier blocking layer is between the porous supporting layer and the conductive layer; and providing a light-absorbing material penetrating from the porous conductive counter electrode layer. The light-absorbing material fills within the porous supporting layer through a plurality of pores in the porous conductive counter electrode layer.
    Type: Application
    Filed: September 15, 2017
    Publication date: December 6, 2018
    Inventors: Chao-Yu CHEN, Tzung-Fang GUO, Wei-Chih LAI
  • Publication number: 20180033976
    Abstract: A light emitting diode and a method of fabricating the same are described. The light emitting diode has: a hole transport layer, an active layer and an electron transport layer. The active layer is disposed on the hole transport layer, and the active layer has a mesophase structure of an organic amine compound and a perovskite structure compound. The electron transport layer is disposed on the active layer.
    Type: Application
    Filed: May 8, 2017
    Publication date: February 1, 2018
    Inventor: Tzung-fang GUO
  • Publication number: 20170229250
    Abstract: A perovskite solar cell is provided with a perovskite material layer having a first surface and a second surface opposite to the first surface; an electron transport layer disposed on the first surface; and a gold-nickel oxide layer disposed on the second surface. Furthermore, a manufacturing method of the perovskite solar cell is disclosed with steps of providing a transparent substrate; forming a gold-nickel oxide layer on the transparent substrate; and forming a perovskite material layer on the gold-nickel oxide layer.
    Type: Application
    Filed: August 24, 2016
    Publication date: August 10, 2017
    Applicant: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Wei-Chih Lai
  • Publication number: 20160005986
    Abstract: A solar cell is provided, and has an organic light-absorbing layer having a perovskite structure, and a hole transport layer disposed on a first surface of the organic light-absorbing layer. The hole transport layer is made of a nickel oxide. A method of manufacturing a solar cell is provided, and has the steps of (1) providing a hole transport layer which is made of a nickel oxide; (2) forming an organic light-absorbing layer having a perovskite structure, which has a first surface on which the hole transporting layer is disposed, and a second surface opposite to the first surface; and (3) forming an electron transport layer on the second surface of the organic light-absorbing layer.
    Type: Application
    Filed: November 6, 2014
    Publication date: January 7, 2016
    Inventors: Tzung-Fang Guo, Chao-Yu Chen
  • Patent number: 9082992
    Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.
    Type: Grant
    Filed: July 21, 2013
    Date of Patent: July 14, 2015
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
  • Publication number: 20140332078
    Abstract: A hybrid organic solar cell (HOSC) with perovskite structure as absorption material and a manufacturing method thereof are provided. The HOSC includes a conductive substrate, a hole transport layer, an active layer, a hole blocking layer and a negative electrode. The active layer has a light absorption layer (LAL) and an electron acceptor layer (EAL). The LAL is made of perovskite material represented by the following equation: CnH2n+1NH3XY3, n is positive integer form 1 to 9; X is Pb, Sn or Ge; and Y is at least one of I, Br or Cl. The EAL is made of at least one type of fullerene or derivatives thereof. A planar heterojunction (PHJ) is formed between the LAL and the EAL. The LAL has simple structure and fabricating process with relatively low cost, so that it is advantageous to carry out the mass production of HOSCs of flexible solid-state form.
    Type: Application
    Filed: July 21, 2013
    Publication date: November 13, 2014
    Applicant: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Jyun-Yuan Jeng, Yi-Fang Chiang, Mu-Huan Lee, Chao-Yu Chen
  • Patent number: 8692235
    Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: April 8, 2014
    Assignee: National Cheng Kung University
    Inventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li
  • Patent number: 8618534
    Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: December 31, 2013
    Assignee: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Jer-Wei Chang, Ten-Chin Wen
  • Publication number: 20130112967
    Abstract: A field-effect transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor active layer, and a dielectric layer. The semiconductor active layer is connected to the source electrode and the drain electrode. The dielectric layer includes denatured albumen and is positioned between the gate electrode and the semiconductor active layer.
    Type: Application
    Filed: February 7, 2012
    Publication date: May 9, 2013
    Applicant: National Cheng Kung University
    Inventors: Tzung-Fang Guo, Jer-Wei Chang, Ten-Chin Wen
  • Patent number: 8350243
    Abstract: An optically-induced dielectrophoresis chip including a substrate, a first electrode layer disposed on the substrate, and an interface modification layer disposed on the first electrode layer. A photo-conductive layer is disposed on the interface modification layer and includes an optical absorbent polymeric material. A barrier layer is disposed on the photo-conductive layer, and a compartment forming layer is disposed on the barrier layer defining a compartment. A second electrode layer covers the compartment forming layer.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: January 8, 2013
    Assignee: National Cheng Kung University
    Inventors: Gwo-Bin Lee, Tzung-Fang Guo, Wei Wang, Yen-Heng Lin
  • Publication number: 20110227047
    Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 22, 2011
    Applicant: National Cheng Kung University
    Inventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li
  • Publication number: 20100051465
    Abstract: An optically-induced dielectrophoresis chip includes a substrate, a first electrode layer disposed on the substrate, an interface modification layer disposed on the first electrode layer, a photo-conductive layer disposed on the interface modification layer and including an optical absorbent polymeric material, a barrier layer disposed on the photo-conductive layer, a compartment forming layer disposed on the barrier layer and defining a compartment, and a second electrode layer covering the compartment forming layer.
    Type: Application
    Filed: August 27, 2009
    Publication date: March 4, 2010
    Inventors: Gwo-Bin Lee, Tzung-Fang Guo, Wei Wang, Yen-Heng Lin
  • Publication number: 20070031700
    Abstract: An organic light emitting diode (OLED) includes a substrate, a first electrode layer, an organic emitting layer, a second electrode layer, and an electron injection layer, in which the electron injection layer is selected from an electron injection layer made from organic molecules, an electron injection layer with nano-grade thickness, or an electron injection layer having dipole moment organic molecules with nano-grade thickness. By utilizing the conformation of the electron injection layer, an OLED having stable operation can be achieved.
    Type: Application
    Filed: August 2, 2006
    Publication date: February 8, 2007
    Inventors: Tzung-Fang Guo, Fuh-Shun Yang, Ten-Chin Wen, Yaw-Shyan Fu, Ruey-Min Chen, Chia-Tin Chung, Chin-In Wu