Patents by Inventor Tzung-Hsian WU

Tzung-Hsian WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9525020
    Abstract: A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes a polysilicon electrode, an insulating layer disposed on the polysilicon electrode, and a metal electrode disposed on the insulating layer. A method for forming the semiconductor device is also disclosed.
    Type: Grant
    Filed: April 10, 2014
    Date of Patent: December 20, 2016
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Chung-Ren Lao, Hsing-Chao Liu, Tzung-Hsian Wu, Chih-Jen Huang
  • Publication number: 20150295018
    Abstract: A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes a polysilicon electrode, an insulating layer disposed on the polysilicon electrode, and a metal electrode disposed on the insulating layer. A method for forming the semiconductor device is also disclosed.
    Type: Application
    Filed: April 10, 2014
    Publication date: October 15, 2015
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Chung-Ren LAO, Hsing-Chao LIU, Tzung-Hsian WU, Chih-Jen HUANG