Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

Abstract: A photolithography exposure of a photoresist coating on a semiconductor wafer uses an optical projection system to form a latent image. The photolithography exposure further uses a mask with a set of multiple pattern focus (MPF) marks. Each MPF mark of includes features having different critical dimension (CD) sizes. The latent image is developed to form a developed photoresist pattern. Dimension sizes are measured of features of the developed photoresist pattern corresponding to the features of the MPF marks having different CD sizes. A spatial focus map of the photolithography exposure is constructed based on the measured dimension sizes. To determine the focal distance at an MPF mark, ratios or differences may be determined between the measured dimension sizes corresponding to the features of the MPF marks having different CD sizes, and the focal distance at the location of the MFP mark constructed based on the determined ratios or differences.

Abstract: A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to form a cut pattern including first and second cut features exposing portions of the respective first and second line features. In a top view, at least one of the first and second cut features is asymmetrically arranged with respect to a central axis of a corresponding first or second line feature. At least one angled ion implantation is performed to enlarge the first and second cut features in at least one direction perpendicular to the first direction. The portions of the first and second line features exposed by the respective first and second cut features are then removed.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming a mandrel features over a substrate, the mandrel feature and performing a coarse cut to remove one or more mandrel features to form a coarse space. After the coarse cut, the substrate is etched by using the mandrel features, with the coarse space as an etch mask, to form fins. A spacer layer is deposited to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the coarse space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the coarse space. A fine cut is performed to remove a portion of one or more mandrel features to form an end-to-end space. An isolation trench is formed in the end-to-end space and the coarse space.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Abstract: A method of fabricating a fin-like field-effect transistor (FinFET) device is disclosed. The method includes forming a mandrel features over a substrate, the mandrel feature and performing a coarse cut to remove one or more mandrel features to form a coarse space. After the coarse cut, the substrate is etched by using the mandrel features, with the coarse space as an etch mask, to form fins. A spacer layer is deposited to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the coarse space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the coarse space. A fine cut is performed to remove a portion of one or more mandrel features to form an end-to-end space. An isolation trench is formed in the end-to-end space and the coarse space.

Abstract: A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.