Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a first redistribution layer over a carrier, the first redistribution layer including a contact pad and a bond pad. A conductive pillar is formed over the contact pad. A backside surface of an integrated circuit die is attached to the bond pad using a solder joint. An encapsulant is formed along a sidewall of the conductive pillar and a sidewall of the integrated circuit die, a front-side surface of the integrated circuit die being substantially level with a topmost surface of the encapsulant and a topmost surface of the conductive pillar. A second redistribution layer is formed over the front-side surface of the integrated circuit die, the topmost surface of the encapsulant and the topmost surface of the conductive pillar.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a first redistribution layer over a carrier, the first redistribution layer including a contact pad and a bond pad. A conductive pillar is formed over the contact pad. A backside surface of an integrated circuit die is attached to the bond pad using a solder joint. An encapsulant is formed along a sidewall of the conductive pillar and a sidewall of the integrated circuit die, a front-side surface of the integrated circuit die being substantially level with a topmost surface of the encapsulant and a topmost surface of the conductive pillar. A second redistribution layer is formed over the front-side surface of the integrated circuit die, the topmost surface of the encapsulant and the topmost surface of the conductive pillar.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a first redistribution layer over a carrier, the first redistribution layer including a contact pad and a bond pad. A conductive pillar is formed over the contact pad. A backside surface of an integrated circuit die is attached to the bond pad using a solder joint. An encapsulant is formed along a sidewall of the conductive pillar and a sidewall of the integrated circuit die, a front-side surface of the integrated circuit die being substantially level with a topmost surface of the encapsulant and a topmost surface of the conductive pillar. A second redistribution layer is formed over the front-side surface of the integrated circuit die, the topmost surface of the encapsulant and the topmost surface of the conductive pillar.

Abstract: A structure including a semiconductor die, a conductive pillar, and an insulating encapsulation is provided. The conductive pillar includes a first pillar portion and a second pillar portion disposed on the first pillar portion, wherein a first width of the first pillar portion is greater than a second width of the second pillar portion. The insulating encapsulation laterally encapsulates the semiconductor die and the conductive pillar.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: An integrated circuit package and a method of forming the same are provided. A method includes forming a first redistribution layer over a carrier, the first redistribution layer including a contact pad and a bond pad. A conductive pillar is formed over the contact pad. A backside surface of an integrated circuit die is attached to the bond pad using a solder joint. An encapsulant is formed along a sidewall of the conductive pillar and a sidewall of the integrated circuit die, a front-side surface of the integrated circuit die being substantially level with a topmost surface of the encapsulant and a topmost surface of the conductive pillar. A second redistribution layer is formed over the front-side surface of the integrated circuit die, the topmost surface of the encapsulant and the topmost surface of the conductive pillar.

Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a dielectric layer, a first redistribution layer (RDL) and a second RDL. The encapsulant laterally encapsulates the die. The dielectric layer is located on the encapsulant and the die. The first RDL penetrates through the dielectric layer to connect to the die. The second RDL is located on the first RDL and the dielectric layer. The second RDL and the first RDL share a common seed layer.

Abstract: Provided is an integrated fan-out (InFO) package structure including a first die, a second die, a third die, a protective layer, and an interconnect structure. The first die has a first surface and a second surface opposite to each other. The first die has a plurality of through substrate vias (TSVs) protruding from the second surface. The second die and the third die are bonded on the first surface of the first die. The protective layer laterally surrounds protrusions of the plurality of TSVs that protrude from the second surface. The interconnect structure are disposed on the protective layer and electrically connected to the plurality of TSVs. The interconnect structure includes a polymer layer covering the protective layer.

Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

Abstract: A structure including a semiconductor die, a conductive pillar, and an insulating encapsulation is provided. The conductive pillar includes a first pillar portion and a second pillar portion disposed on the first pillar portion, wherein a first width of the first pillar portion is greater than a second width of the second pillar portion. The insulating encapsulation laterally encapsulates the semiconductor die and the conductive pillar.

Abstract: A semiconductor package includes a substrate and a redistribution structure. The substrate has at least one contact. The redistribution structure is disposed on the substrate and electrically connected to the at least one contact, wherein the redistribution structure includes a plurality of redistribution layers. Each of the redistribution layers include a seed layer, a conductive material layer and a dielectric material layer. The conductive material layer is disposed on the seed layer. The dielectric material layer is surrounding the conductive material layer and the seed layer. At least one of the redistribution layers include an anti-reflective layer disposed in between the seed layer and the conductive material layer.

Abstract: A semiconductor device and method of manufacturing is provided, whereby a support structure is utilized to provide additional support for a conductive element in order to eliminate or reduce the formation of a defective surface such that the conductive element may be formed to have a thinner structure without suffering deleterious structures.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a bump structure, a polymer layer and a metal layer. The bump structure includes a metal pad and a bump electrically connected to the metal pad. The polymer layer extends laterally from a sidewall of the bump. The metal layer is over the bump structure and in physical contact with a side surface of the metal pad.

Abstract: A semiconductor package includes a substrate and a redistribution structure. The substrate has at least one contact. The redistribution structure is disposed on the substrate and electrically connected to the at least one contact, wherein the redistribution structure includes a plurality of redistribution layers. Each of the redistribution layers include a seed layer, a conductive material layer and a dielectric material layer. The conductive material layer is disposed on the seed layer. The dielectric material layer is surrounding the conductive material layer and the seed layer. At least one of the redistribution layers include an anti-reflective layer disposed in between the seed layer and the conductive material layer.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a dielectric layer, a first redistribution layer (RDL) and a second RDL. The encapsulant laterally encapsulates the die. The dielectric layer is located on the encapsulant and the die. The first RDL penetrates through the dielectric layer to connect to the die. The second RDL is located on the first RDL and the dielectric layer. The second RDL and the first RDL share a common seed layer.