Patents by Inventor Tzung-I Tsai

Tzung-I Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor process
    Patent number: 8835243
    Abstract: A semiconductor process includes the following steps. A first structure and a second structure are formed on a substrate. An oxide layer is entirely formed to cover the first structure and the second structure. A nitride layer is formed to entirely cover the oxide layer. A dry etching process is performed to remove a part of the nitride layer on the first structure. A wet etching process is performed to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: September 16, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Tzung-I Tsai, Shui-Yen Lu
  • SEMICONDUCTOR PROCESS
    Publication number: 20130295735
    Abstract: A semiconductor process includes the following steps. A first structure and a second structure are formed on a substrate. An oxide layer is entirely formed to cover the first structure and the second structure. A nitride layer is formed to entirely cover the oxide layer. A dry etching process is performed to remove a part of the nitride layer on the first structure. A wet etching process is performed to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 7, 2013
    Inventors: Tzung-I Tsai, Shui-Yen Lu