Abstract: Different isolation liners for different type FinFETs and associated isolation feature fabrication are disclosed herein. An exemplary method includes performing a fin etching process on a substrate to form first trenches defining first fins in a first region and second trenches defining second fins in a second region. An oxide liner is formed over the first fins in the first region and the second fins in the second region. A nitride liner is formed over the oxide liner in the first region and the second region. After removing the nitride liner from the first region, an isolation material is formed over the oxide liner and the nitride liner to fill the first trenches and the second trenches. The isolation material, the oxide liner, and the nitride liner are recessed to form first isolation features (isolation material and oxide liner) and second isolation features (isolation material, nitride liner, and oxide liner).

Abstract: A tent includes a canvas and a frame. The canvas includes a rectangular floor piece and two pairs of opposite triangular side pieces thereby forming a substantially pyramid-like structure, the rectangular floor piece having a loop at each of four corners thereof. The frame includes two flexible triangular members respectively mounted to three sides of each of one pair of opposite triangular side pieces with top vertices of the triangular members meeting at an apex of the canvas. Each flexible triangular member is collapsible such that the vertices thereof coincide with one another. A fastening member passes through the loops after the triangular members are collapsed to retain the triangular members in the collapsed position.