Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.

Abstract: A read voltage setting method for a rewritable non-volatile memory module is provided. The method includes: reading test data stored in memory cells of a word line to obtain a corresponding critical voltage distribution and identifying a default read voltage corresponding to the word line based on the corresponding critical voltage distribution; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference value between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.

Abstract: A memory storage device and a repairing method thereof are provided. The memory storage device has a rewritable non-volatile memory module having multiple physical units. The physical units include at least one backup physical unit which is configured to be accessed only by a specific command set and stored with at least one customized data. The method includes receiving a specific read command from a host system for reading the backup physical unit and transmitting the customized data therein to the host system when the memory storage device is capable of receiving and processing commands from the host system, the specific read command belongs to the specific command set; and writing the customized data from the host system into a corresponding physical unit to restore the memory storage device to a factory setting when receiving the writing command from the host system for writing the customized data.

Abstract: A procurement rescheduling system (20) includes a production planning module (30) for scheduling production and generating production scheduling sheets (102) according to received purchase order modifications (100); a material management module (31) for managing inventory data and bill of material data stored in a database (33); and a procurement rescheduling module (32) for rescheduling material procurement according to the production scheduling sheets. The procurement rescheduling module includes a time span management submodule (321) for managing procurement time spans for different materials, a demand calculation submodule (322) for calculating revised demand for materials in each procurement time span, a delivery date calculation submodule (323) for calculating delivery dates for materials procurement according to the production scheduling sheets, and a material purchase order generating submodule (324) for automatically generating revised material purchase orders.