Abstract: An audio switching device is provided. The audio switching device includes a communication module. The communication module is configured to provide a first audio channel, a second audio channel and a third audio channel. The first audio channel is configured to communicatively connect to a first external device, the second audio channel is configured to communicatively connect to a second external device, and the third audio channel is configured to communicatively connect to a third external device. When the audio switching device is operated in a first mode, the first audio channel, the second audio channel and the third audio channel are communicatively connected to each other, so as to allow a three-way calling.

Abstract: A relay device is disclosed. The relay device includes a wired connection circuit, a wireless communication circuit, and a processor. The wired connection circuit is suitable for wired connecting to a user-side electronic device. The wireless communication circuit is suitable for wirelessly connecting to a control-side electronic device. The processor is coupled to the wired connection circuit and the wireless communication circuit. When the wireless communication circuit and the control-side electronic device are wirelessly connected, and the wired connection circuit and the user-side electronic device are wired connected, the processor is configured to transfer a control authority of a first external peripheral device from the control-side electronic device to the user-side electronic device.

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.

Abstract: In a programming method for a NAND flash memory device, a self-boosting scheme is used to eliminate excess electrons in the channel of an inhibit cell string that would otherwise cause programming disturb. The elimination is enabled by applying a negative voltage to word lines connected to the inhibit cell string before boosting the channel, and this leads to bringing high program immunity. A row decoder circuitry to achieve the programming operation and a file system architecture based on the programming scheme to improve the efficiency of file management are also described.