Abstract: A transistor can include a plurality of source regions and a plurality of drain regions arranged in an alternating manner, with each of the source regions and the drain regions being implemented as a first type active region, and a plurality of gate structures implemented relative to the source regions and the drain regions such that application of a voltage to each gate structure results in formation of a conductive channel between a respective pair of source and drain regions. The transistor can further include a body region configured to provide the respective conductive channel upon the application of the voltage to the corresponding gate structure, with the body region being implemented as a second type active region. The transistor can further include a recessed region defined by an end of each drain region and one or both of the gate structures adjacent to the drain region.

Abstract: Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.

Abstract: Transistors having reduced parasitics and enhanced performance. In some embodiments, a transistor can include a source and a drain each implemented as a first type active region, and a gate implemented relative to the source and the drain such that application of a voltage to the gate results in formation of a conductive channel between the source and the drain. The transistor can further include a body configured to provide the conductive channel upon the application of the voltage to the gate. The body can be implemented as a second type active region that butts with the first type active region on the source side at a respective area not covered by the gate, and does not butt with the first type active region on the drain side at a respective area not covered by the gate.

Abstract: A power amplifier system comprises an envelope tracker configured to generate a supply voltage that changes in relation to an envelope of a radio frequency signal, a power amplifier configured to amplify the radio frequency signal, and an adaptation circuit configured to adapt the supply voltage to provide operating power to the power amplifier. The adaptation circuit includes at least one Gallium Nitride field-effect-transistor configured to generate the operating power in response to an increased swing of the supply voltage and at least one linearizing circuit configured to linearize an operation of the Gallium Nitride field-effect-transistor.

Abstract: Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the doped region.

Abstract: Circuits, systems, devices, and methods related to a switch with an integrated Schottky barrier contact are discussed herein. For example, a radio-frequency switch can include an input node, an output node, and a transistor connected between the input node and the output node. The transistor can be configured to control passage of a radio-frequency signal from the input node to the output node. The transistor can include a first Schottky diode integrated into a drain of the transistor and/or a second Schottky diode integrated into a source of the transistor. The first Schottky diode and/or the second Schottky diode can be configured to compensate a non-linearity effect of the radio-frequency switch.

Abstract: Amplifier having electrostatic discharge and surge protection circuit. In some embodiments, a radio-frequency integrated circuit can include an amplifier, a controller configured to control operation of the amplifier, and a clamp circuit configured to provide electrostatic discharge protection and surge protection for either or both of the amplifier and the controller. The clamp circuit can include a feedback combination clamp implemented to direct a current associated with either or both of an electrostatic discharge and a surge at a first node to a second node.

Abstract: Concurrent electrostatic discharge and surge protection clamps in power amplifiers. In some embodiments, a semiconductor die can include a semiconductor substrate and an integrated circuit implemented on the semiconductor substrate. The integrated circuit can include a power amplifier and a controller. The semiconductor die can further include a clamp circuit implemented on the semiconductor substrate and configured to provide electrostatic discharge protection and surge protection for at least some of the integrated circuit.

Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.

Abstract: Circuits, systems, devices, and methods related to a switch with an integrated Schottky barrier contact are discussed herein. For example, a radio-frequency switch can include an input node, an output node, and a transistor connected between the input node and the output node. The transistor can be configured to control passage of a radio-frequency signal from the input node to the output node. The transistor can include a first Schottky diode integrated into a drain of the transistor and/or a second Schottky diode integrated into a source of the transistor. The first Schottky diode and/or the second Schottky diode can be configured to compensate a non-linearity effect of the radio-frequency switch.

Abstract: Transistors having reduced parasitics and enhanced performance. In some embodiments, a transistor can include a source and a drain each implemented as a first type active region, and a gate implemented relative to the source and the drain such that application of a voltage to the gate results in formation of a conductive channel between the source and the drain. The transistor can further include a body configured to provide the conductive channel upon the application of the voltage to the gate. The body can be implemented as a second type active region that butts with the first type active region on the source side at a respective area not covered by the gate, and does not butt with the first type active region on the drain side at a respective area not covered by the gate.

Abstract: Concurrent electrostatic discharge and surge protection clamps in power amplifiers. In some embodiments, a semiconductor die can include a semiconductor substrate and an integrated circuit implemented on the semiconductor substrate. The integrated circuit can include a power amplifier and a controller. The semiconductor die can further include a clamp circuit implemented on the semiconductor substrate and configured to provide electrostatic discharge protection and surge protection for at least some of the integrated circuit.

Abstract: A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.

Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.

Abstract: A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.