Abstract: In the Flip-Chip type LED component built therein with a Zener chip: a Flip-Chip LED chip and a Flip-Chip Zener straddle respectively over and beneath two electrode pins, wherein the Flip-Chip Zener is covered with insulating material to form a base and the Flip-Chip LED chip is covered with a transparent package to thereby form an integral Flip-Chip LED component, hence not only the Flip-Chip LED component can be protected in use, but also can largely simplify the production process and reduce the cost of production.

Abstract: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.

Abstract: This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off current in conduction channels under certain bias and to provide constant current within cut-off voltage and breakdown voltage region between Schottky barrier section/ohmic contact section as the first electrode and the other ohmic contact section as the second electrode respectively, and has excellent characteristics as lower cut-off voltage (Vkp) than bipolar devices and easily gets higher constant current (Ip) by integrating several constant current units.