Abstract: A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Abstract: Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.

Abstract: Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

Abstract: Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

Abstract: Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises positioning a substrate in a processing chamber, introducing an inert gas into the processing chamber, introducing a silicon source gas into the processing chamber generating a high density plasma, and depositing the amorphous silicon film. The amorphous silicon film is deposited at a substrate temperature 500° C. or less. The amorphous silicon film may then be annealed to improve film properties.