Abstract: A clipping mechanism and electronic apparatus are provided. The clipping mechanism for clipping an object comprises a casing and a sliding device. The casing has a socket for containing the object. The sliding device disposed on the casing, has a clipping bump and sliding between a first position and a second position along a first direction. When the sliding device slides to the second position, the sliding device selectively moves forward and backward to the object along a second direction. When the sliding device slides between the first position and the second position, the clipping bump limits the object to be clipped with the socket. When the sliding device is located at the second position and slides away from the object toward a third position along the second direction, the clipping bump is separated from the object such that the object can be removed from the socket.

Abstract: An in-situ performed method utilizing a pure H2O plasma to remove a layer of resist from a substrate or wafer without substantially accumulating charges thereon. Also, in-situ performed methods utilizing a pure H2O plasma or a pure H2O vapor to release or remove charges from a surface or surfaces of a substrate or wafer that have accumulated during one or more IC fabrication processes.

Abstract: An in-situ method of stripping a layer of resist from a substrate or wafer utilizes pure H2O plasma recipe to substantially prevent charges from accumulating on the substrate or wafer during stripping of the layer of resist.

Abstract: A structure of antenna is constructed by combination of a housing and a cover by means the ultrasonic welding process. The housing is a column structure and a plurality of long protruders are axially mounted on the outer surface of the housing. The cover is a hollow column structure having an opening at one end thereof and a plurality of long channels and weldlines are axially mounted on the inner surface of the cover, wherein an interference fit is formed between the long channels and the long protruders, and the weldlines are disposed in the interference region formed between the long channels and the long protruders.