Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls of the first opening. One or more etch processes form one or more spacer-shaped structures along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.

Abstract: Image sensor devices, methods of manufacture thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes bonding a first semiconductor wafer to a second semiconductor wafer, the first semiconductor wafer comprising a substrate and an interconnect structure coupled to the substrate. The method includes removing a portion of the substrate from the first semiconductor wafer to expose a portion of the interconnect structure.

Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.

Abstract: A semiconductor device comprises a first semiconductor chip including a first substrate and a plurality of first metal lines formed over the first substrate and a second semiconductor chip bonded on the first semiconductor chip, wherein the second semiconductor chip comprises a second substrate and a plurality of second metal lines formed over the second substrate. The semiconductor device further comprises a conductive plug coupled between the first metal lines and the second metal lines, wherein the conductive plug comprises a first portion formed over a first side of a hard mask layer, wherein the first portion is of a first width and a second portion formed over a second side of the hard mask layer, wherein the second portion is of a second width greater than or equal to the first width.

Abstract: A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

Abstract: A structure includes a first chip having a first substrate, and first dielectric layers underlying the first substrate, with a first metal pad in the first dielectric layers. A second chip includes a second substrate, second dielectric layers over the second substrate and bonded to the first dielectric layers, and a second metal pad in the second dielectric layers. A conductive plug includes a first portion extending from a top surface of the first substrate to a top surface of the first metal pad, and a second portion extending from the top surface of the first metal pad to a top surface of the second metal pad. An edge of the second portion is in physical contact with a sidewall of the first metal pad. A dielectric layer spaces the first portion of the conductive plug from the first plurality of dielectric layers.

Abstract: A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips.

Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.