Patents by Inventor Udaya B. Patri

Udaya B. Patri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLISHING SLURRIES FOR CHEMICAL-MECHANICAL POLISHING
    Publication number: 20090224200
    Abstract: The aqueous slurries according to the present invention include soluble salts of molybdenum dissolved in an oxidizing agent and deionized water. Other aqueous polishing slurries include dissolved and undissolved nanoparticles of MoO3 in a solution of deionized water and an oxidizing agent.
    Type: Application
    Filed: May 20, 2009
    Publication date: September 10, 2009
    Applicant: Climax Engineered Materials, LLC
    Inventors: Sunil Chandra Jha, Sreehari Nimmala, Sharath Hedge, Youngki Hong, Suryadevara Vijayakumar Babu, Udaya B. Patri
  • Polishing slurries and methods for chemical mechanical polishing
    Patent number: 7553430
    Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: June 30, 2009
    Assignee: Climax Engineered Materials, LLC
    Inventors: Sunil Chandra, Sreehari Nimmala, Suryadevara Vijayakumar Babu, Udaya B. Patri, Sharath Hedge, Youngki Hong
  • Method for Chemical-Mechanical Planarization of Copper
    Publication number: 20080277378
    Abstract: Method for polishing copper by chemical-mechanical planarization. The method of the present invention includes dissolving MoO3 in an oxidizing agent and deionized water to form a first slurry; filtering the first slurry; adding supplemental ceramic/metal oxide nano-particles to the first slurry after filtering, forming an aqueous slurry; introducing the aqueous slurry between the copper and a polishing pad; and, polishing the copper by moving the polishing pad and the copper relative to one another.
    Type: Application
    Filed: June 27, 2008
    Publication date: November 13, 2008
    Applicant: Climax Engineered Materials, LLC
    Inventors: S.V. Babu, Sharath Hegde, Sunil Chandra Jha, Udaya B. Patri, Youngki Hong
  • Polishing slurries and methods for chemical mechanical polishing
    Patent number: 7186653
    Abstract: Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: March 6, 2007
    Assignee: Climax Engineered Materials, LLC
    Inventors: Sunil Chandra Jha, Sreehari Nimmala, Sharath Hegde, Youngki Hong, Suryadevera V. Babu, Udaya B. Patri