Patents by Inventor Uddip Roy

Uddip Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8773924
    Abstract: A read circuit includes a precharge circuit, coupled with at least a subset of bit lines and a sense circuit in a memory, and a transmission gate. The precharge circuit receives a first control signal and is operative during a first mode to set the bit lines to a first voltage level and to set an input to the sense circuit to a second voltage level. The transmission gate connects a given one of the bit lines with the sense circuit during a second mode as a function of a second control signal, such that when reading a first logic level from the selected memory cell, when the input of the sense circuit is connected with the given bit line, the given bit line is discharged to at least a third voltage, which is between the first and second voltage levels, thereby reducing a read access time in the memory.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: July 8, 2014
    Assignee: LSI Corporation
    Inventors: Uddip Roy, Vinod Rachamadugu, Vamsi Krishna Grandhi, Setti Shanmukheswara Rao
  • Publication number: 20140153346
    Abstract: A read circuit includes a precharge circuit, coupled with at least a subset of bit lines and a sense circuit in a memory, and a transmission gate. The precharge circuit receives a first control signal and is operative during a first mode to set the bit lines to a first voltage level and to set an input to the sense circuit to a second voltage level. The transmission gate connects a given one of the bit lines with the sense circuit during a second mode as a function of a second control signal, such that when reading a first logic level from the selected memory cell, when the input of the sense circuit is connected with the given bit line, the given bit line is discharged to at least a third voltage, which is between the first and second voltage levels, thereby reducing a read access time in the memory.
    Type: Application
    Filed: December 5, 2012
    Publication date: June 5, 2014
    Applicant: LSI CORPORATION
    Inventors: Uddip Roy, Vinod Rachamadugu, Vamsi Krishna Grandhi, Setti Shanmukheswara Rao
  • Patent number: 8493764
    Abstract: An integrated circuit having a CAM array includes a plurality of CAM cells organized in rows and columns where each row corresponds to an address word and each column corresponds to a bit position, and a match line for each row connected to be shared by CAM cells in that row. The CAM array also includes a feedback circuit for each row connected to limit a discharge voltage for a corresponding match line in that row. In another aspect, a method of operating an integrated circuit having a CAM array includes organizing a plurality of CAM cells in rows and columns where each row corresponds to an address word and each column corresponds to a bit position, and sharing a match line with CAM cells in each row. The method also includes limiting a discharge voltage for the match line.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: July 23, 2013
    Assignee: LSI Corporation
    Inventors: Vinod Rachamadugu, Uddip Roy, Setti Shanmukheswara Rao, Nikhil Lad
  • Publication number: 20130170273
    Abstract: A CAM circuit includes a plurality of core memory cells, each cell including comparison logic for generating a local match signal based on a comparison between stored data in the cell and a compare value. The CAM circuit includes a plurality of local match lines, each local match line coupled with a corresponding cell and adapted to convey the local match signal generated by the cell. The CAM circuit includes combination logic for receiving respective local match signals generated by a subset of the cells and for generating an output word match signal having a value indicative of the local match signals. The subset of cells is arranged with at least one block having a word size that is limited based on available space for routing tracks used to convey the local match signals and at least one word match signal in a base metal layer across the cells.
    Type: Application
    Filed: December 29, 2011
    Publication date: July 4, 2013
    Applicant: LSI CORPORATION
    Inventors: Vinod Rachamadugu, Uddip Roy, Setti Shanmuhkheswara Rao
  • Publication number: 20120206951
    Abstract: An integrated circuit having a CAM array includes a plurality of CAM cells organized in rows and columns where each row corresponds to an address word and each column corresponds to a bit position, and a match line for each row connected to be shared by CAM cells in that row. The CAM array also includes a feedback circuit for each row connected to limit a discharge voltage for a corresponding match line in that row. In another aspect, a method of operating an integrated circuit having a CAM array includes organizing a plurality of CAM cells in rows and columns where each row corresponds to an address word and each column corresponds to a bit position, and sharing a match line with CAM cells in each row. The method also includes limiting a discharge voltage for the match line.
    Type: Application
    Filed: February 10, 2011
    Publication date: August 16, 2012
    Inventors: Vinod Rachamadugu, Uddip Roy, Setti Shanmukheswara Rao, Nikhil Lad