Abstract: A mixed-signal integrated circuit includes an analog circuit comprising at least one digital block embedded in the analog circuit, the at least one digital block comprising a plurality of functional bits and a plurality of configuration bits, the plurality of functional bits providing for a functionality of the analog circuit according to a designed functionality and the plurality of configuration bits being usable for configuring a plurality of operational modes of the analog circuit; and a digital circuit comprising a scan chain configured to scan at least part of the functional bits of the digital block embedded in the analog circuit with respect to the designed functionality, wherein the scan chain is further configured to set at least part of the configuration bits of the digital block embedded in the analog circuit according to a selected operational mode of the plurality of operational modes of the analog circuit.

Abstract: A mixed-signal integrated circuit includes an analog circuit comprising at least one digital block embedded in the analog circuit, the at least one digital block comprising a plurality of functional bits and a plurality of configuration bits, the plurality of functional bits providing for a functionality of the analog circuit according to a designed functionality and the plurality of configuration bits being usable for configuring a plurality of operational modes of the analog circuit; and a digital circuit comprising a scan chain configured to scan at least part of the functional bits of the digital block embedded in the analog circuit with respect to the designed functionality, wherein the scan chain is further configured to set at least part of the configuration bits of the digital block embedded in the analog circuit according to a selected operational mode of the plurality of operational modes of the analog circuit.

Abstract: A digital voltage boost circuit, optionally working in parallel with an analog voltage regulator, periodically injects a constant amount of current each cycle into the bit line of a high density memory array to eliminate the bias voltage reduction which would otherwise occur. This results in a much faster recovery time and reduces the semiconductor real estate required. A pulse generator in the boost circuit generates one or more current modulation signals which control corresponding current supply devices in a current source. The boost circuit drives a constant amount of current to the bias voltage node each memory cycle.

Abstract: A digital voltage boost circuit, optionally working in parallel with an analog voltage regulator, periodically injects a constant amount of current each cycle into the bit line of a high density memory array to eliminate the bias voltage reduction which would otherwise occur. This results in a much faster recovery time and reduces the semiconductor real estate required. A pulse generator in the boost circuit generates one or more current modulation signals which control corresponding current supply devices in a current source. The boost circuit drives a constant amount of current to the bias voltage node each memory cycle.

Abstract: A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.

Abstract: A method of increasing a drain to source voltage measured at an access pass-gate to a SRAM circuit in a SRAM memory array, including increasing a low voltage from a low voltage source powering said SRAM circuit, and increasing a high voltage from a high voltage source powering the SRAM circuit.