Abstract: Systems and methods for mitigating migration of conductive material in stacked semiconductor devices are disclosed herein. For example, a stacked semiconductor device according to the present technology can include a first die and a second die carried by and bonded to the first die. The first die has a first bonding surface and includes a first bond pad, a second bond pad spaced apart from the first bond pad, and a migration isolation pit. The migration isolation pit is positioned between the first bond pad and the second bond pad. The second die has a second bonding surface and includes a third bond pad bonded to the first bond pad and a fourth bond pad bonded to the second bond pad. In some embodiments, the second die also includes a migration isolation pit positioned between the third bond pad and the fourth bond pad.