Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

Abstract: Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.

Abstract: The present disclosure relates to a cleaning assemblies, components thereof, and methods associated therewith for substrate processing chambers. In one example, a cleaning assembly for a substrate processing chamber includes a distribution ring. The distribution ring comprises a body with an inlet and an outlet. The outlet is fluidly coupled to an internal volume of the substrate processing chamber via a sidewall of the substrate processing chamber. The cleaning assembly includes a cleaning conduit configured to fluidly couple a gas manifold to the distribution ring for diverting a first portion of cleaning fluid from the gas manifold to the distribution ring.