Patents by Inventor Udo Bringmann

Udo Bringmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for depositing a layer containing boron and nitrogen
    Patent number: 5175020
    Abstract: A process for depositing a layer containing boron and nitrogen on a substrate by decomposing one or more N-substituted borazoles in the presence of the substrate, in particular by a plasma CVD process.
    Type: Grant
    Filed: April 24, 1992
    Date of Patent: December 29, 1992
    Assignee: Solvay Deutschland GmbH
    Inventors: Guenther Doellein, Guenter Weidenbach, Hans Meyer, Udo Bringmann, Andreas Weber, Claus-Peter Klages
  • Method of depositing micro-crystalline solid particles by hot filament CVD
    Patent number: 5112649
    Abstract: Method of depositing micro-crystalline solid particles from a vapor phase containing a carbonaceous gas using chemical vapor deposition (CVD), in which the solid particles to be deposited are deposited at a pressure in the range from 10.sup.-5 to 1 bar onto a substrate which has been heated to a temperature in the range from 450.degree. to 1200.degree. C. and in which the chemical vapor phase reactions are effected in the gas phase which is thermally energized by means of a resistance heat conductor, a resistance heat conductor made of a carbide of at least one transition metal from the secondary group IVa to VIa of the periodic element system (PSE) with a carbon content which substantially corresponds to a stoichiometrical composition of the carbide and having a melting point of >2000.degree. C. being used.
    Type: Grant
    Filed: October 25, 1990
    Date of Patent: May 12, 1992
    Assignee: U.S. Philips Corporation
    Inventors: Udo Bringmann, Claus-Peter Klages, Rolf Six, Lothar Schafer
  • Thin-film strain gauge system and method of manufacturing same
    Patent number: 4786887
    Abstract: Thin film strain gauge system consisting of an elastically deformable flexible metallic substrate on which an electrically insulating layer of a plasma-polymerized material, in particular of Si:N:O:C:H-containing compounds and thereon a structured resistance layer as well as an electrically readily conducting layer having a structure for the electrical contacting are provided.
    Type: Grant
    Filed: July 30, 1987
    Date of Patent: November 22, 1988
    Assignee: U.S. Philips Corporation
    Inventors: Udo Bringmann, Olaf H. Dossel, Klaus W. Gerstenberg, Gerhard Kursten, Reiner U. Orlowski, Detlef G. Schon
  • Device for coating a substrate by means of plasma-CVD or cathode sputtering
    Patent number: 4715319
    Abstract: A device for covering a substrate by means of both plasma chemical vapor deposition and by high-frequency cathode sputtering which, as a result of easily exchangeable individual devices to introduce gaseous substances into the reaction space as well as easily exchangeable individual devices for influencing the flow of the process gases within the reaction space, results in a very good uniformity of the layer thickness of the produced layers even when the operation has to be carried out at higher gas pressures and hence higher flow rates.
    Type: Grant
    Filed: February 27, 1987
    Date of Patent: December 29, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Udo Bringmann, Klaus Drews, Detlef Schon
  • Device for coating a substrate by means of plasma-CVD or cathode sputtering
    Patent number: 4673588
    Abstract: A device for covering a substrate by means of both plasma chemical vapor deposition and by high-frequency cathode sputtering which, as a result of easily exchangeable individual devices to introduce gaseous substances into the reaction space as well as easily exchangeable individual devices for influencing the flow of the process gases within the reaction space, results in a very good uniformity of the layer thickness of the produced layers even when the operation has to be carried out at higher gas pressures and hence higher flow rates.
    Type: Grant
    Filed: January 25, 1985
    Date of Patent: June 16, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Udo Bringmann, Klaus Drews, Detlef G. Schon