Patents by Inventor Udo Gerlach
Udo Gerlach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9547069Abstract: One embodiment of the present invention relates to a transmitter within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.Type: GrantFiled: July 17, 2014Date of Patent: January 17, 2017Assignee: Infineon Technologies AGInventors: Johann Peter Forstner, Udo Gerlach
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Publication number: 20160241231Abstract: A bipolar transistor switches for radio frequency signals are disclosed. In an embodiment a device includes a first radio frequency (RF) terminal, a second RF terminal, and a bipolar transistor, wherein an emitter terminal of the bipolar transistor is coupled to the first RF terminal, and wherein a collector terminal of the bipolar transistor is coupled to the second RF terminal. The device further includes a base current supply circuit configured to selectively supply a base current to a base terminal of the bipolar transistor.Type: ApplicationFiled: February 17, 2015Publication date: August 18, 2016Inventors: Thomas Leitner, Johann-Peter Forstner, Udo Gerlach
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Publication number: 20150316641Abstract: One embodiment of the present invention relates to a transmitter within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.Type: ApplicationFiled: July 17, 2014Publication date: November 5, 2015Inventors: Johann Peter Forstner, Udo Gerlach
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Patent number: 9129836Abstract: A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.Type: GrantFiled: September 3, 2013Date of Patent: September 8, 2015Assignee: Infineon Technologies, AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Patent number: 8791854Abstract: One embodiment of the present invention relates to a radar transmitter comprised within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The radar transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.Type: GrantFiled: October 10, 2011Date of Patent: July 29, 2014Assignee: Infineon Technologies AGInventors: Johann Peter Forstner, Udo Gerlach
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Publication number: 20140001550Abstract: A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.Type: ApplicationFiled: September 3, 2013Publication date: January 2, 2014Applicant: Infineon Technologies AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Patent number: 8525272Abstract: A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode.Type: GrantFiled: April 10, 2009Date of Patent: September 3, 2013Assignee: Infineon Technologies AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Publication number: 20130088383Abstract: One embodiment of the present invention relates to a radar transmitter comprised within a single integrated chip substrate, which is capable of continuous beam steering of a transmitted radar beam as well as an option to change the physical position of the origin of the transmit radar beam. The radar transmitter has a signal generator that generates an RF signal. The RF signal is provided to a plurality of independent transmission chains, which contain independently operated vector modulators configured to introduce an individual phase adjustment to the high frequency input signal to generate separate RF output signals. A control unit is configured to selectively activate a subset of (e.g., two or more) the independent transmission chains. By activating the subset of independent transmission chains to generate RF output signals with separate phases, a beam steering functionality is enabled. Furthermore, the subset defines a changeable position of the transmitted radar beam.Type: ApplicationFiled: October 10, 2011Publication date: April 11, 2013Applicant: Infineon Technologies AGInventors: Johann Peter Forstner, Udo Gerlach
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Patent number: 7750721Abstract: A reference current circuit has an input configured to receive an input current, a first transistor, a second transistor, and an output configured to provide a reference current. The input is directly connected to a control input of the second transistor and a first terminal of the first transistor, and is connected via a first resistor to a control input of the first transistor. The output is connected to a first terminal of the second transistor. A reference node is connected via a second resistor to the control input of the first transistor, directly to a second terminal of the first transistor and via a third resistor to a second terminal of the second transistor.Type: GrantFiled: April 10, 2008Date of Patent: July 6, 2010Assignee: Infineon Technologies AGInventors: Nikolay Ilkov, Udo Gerlach
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Publication number: 20090278206Abstract: A switching transistor includes a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, having a first conductivity type and having a barrier region dopant concentration that is higher than the substrate dopant concentration. A source region is embedded in the barrier region, and has a second conductivity type and has a dopant concentration that is higher than the barrier region dopant concentration. A drain region is embedded in the barrier region and is offset from the source region. The draining region has the second conductivity type and a dopant concentration that is higher than the barrier region dopant concentration. A channel region extends between the source region and the drain region, wherein the channel region comprises a subregion of the barrier region. An insulation region covers the channel region and is disposed between the channel region and a gate electrode.Type: ApplicationFiled: April 10, 2009Publication date: November 12, 2009Applicant: INFINEON TECHNOLOGIES AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Publication number: 20090256628Abstract: A reference current circuit has an input configured to receive an input current, a first transistor, a second transistor, and an output configured to provide a reference current. The input is directly connected to a control input of the second transistor and a first terminal of the first transistor, and is connected via a first resistor to a control input of the first transistor. The output is connected to a first terminal of the second transistor. A reference node is connected via a second resistor to the control input of the first transistor, directly to a second terminal of the first transistor and via a third resistor to a second terminal of the second transistor.Type: ApplicationFiled: April 10, 2008Publication date: October 15, 2009Inventors: Nikolay Ilkov, Udo Gerlach
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Patent number: 7564103Abstract: A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration.Type: GrantFiled: November 4, 2005Date of Patent: July 21, 2009Assignee: Infineon Technologies AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Publication number: 20060118884Abstract: A high-frequency switching transistor comprises a substrate having a substrate dopant concentration and a barrier region bordering on the substrate, which has a first conductivity type, wherein a barrier region dopant concentration is higher than the substrate dopant concentration. Further, the high-frequency switching transistor comprises a source region embedded in the barrier region, which comprises a second conductivity type different to the first conductivity type, and has a source region dopant concentration, which is higher than the barrier region dopant concentration. Additionally, the high-frequency switching transistor comprises a drain region embedded in the barrier region and disposed offset from the source region, which comprises the second conductivity type and has a drain region dopant concentration, which is higher than the barrier region dopant concentration.Type: ApplicationFiled: November 4, 2005Publication date: June 8, 2006Applicant: Infineon Technologies AGInventors: Reinhard Losehand, Hans Taddiken, Udo Gerlach
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Patent number: 6518855Abstract: Microwave circuit arrangement containing one or more semiconductor switching elements, which are characterized in that at least one semiconductor switching element is controlled or switched by alteration of the drain and source potentials, and for use of these circuits in mobile telephones or mobile radio transceivers.Type: GrantFiled: February 5, 2001Date of Patent: February 11, 2003Assignee: Infineon Technologies AGInventors: Udo Gerlach, Andreas Weisgerber