Abstract: A process for the production of semiconductor elements is set forth which includes metallizing a side of a large-area semiconductor wafer, having at least two zones of differing conductivity types, applying a soft-solder plate to the metallized side of said large-area wafer, bringing a perforated plate with a desired pattern of holes against said soft-solder plate, said perforated plate being formed of a material which does not form an alloy with said soft-solder plate, subjecting said perforated plate to a load while said soft-solder is heated to its melting temperature, cooling said soft-solder plate and removing it, and subjecting said large-area semiconductor wafer to a sand blast which is directed against the side coated with the solder metal until the large-area wafer has been divided up. The stream of the sand on the said blast may be as wide as the large-area wafer. The metal layer formed on the large-area wafer is preferably formed as two nickel layers and a gold layer.