Abstract: A method of forming a semiconductor device includes etching a gate stack to form a trench extending into the gate stack, forming a dielectric layer on a sidewall of the gate stack, with the sidewall exposed to the trench, and etching the dielectric layer to remove a first portion of the dielectric layer at a bottom of the trench. A second portion of the dielectric layer on the sidewall of the gate stack remains after the dielectric layer is etched. After the first portion of the dielectric layer is removed, the second portion of the dielectric layer is removed to reveal the sidewall of the gate stack. The trench is filled with a dielectric region, which contacts the sidewall of the gate stack.

Abstract: An infusing device includes an infusing container with an annular wall that extends in an axial direction, and a bottom wall that defines an outlet therein for discharging a beverage. A filtering member is inserted in the infusing container with a major surface transverse to the axial direction. The filtering member has a center area and a perforated portion for passage of the beverage. A stem is fixed at the center area and extends outwardly of the mouth for gripping by a user's hand. A plug member is disposed underneath the filtering member to register with the outlet. When the filtering member moves with the stem in the axial direction, the plug member will engage and be disengaged from the outlet so as to close and open the outlet, respectively.