Abstract: A display apparatus can include a buffer layer on a flexible substrate; a first thin film transistor on the buffer layer including a first semiconductor pattern, a first gate electrode, a first source electrode and a first drain electrode, a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode and a second drain electrode, and a passivation layer on the first and the second thin film transistors. Also, the display apparatus includes a planarization layer, a light-emitting device including a first electrode, a light-emitting layer and a second electrode on the planarization layer, and an encapsulating element on the light-emitting device. Also, the light-emitting device is electrically connected to the first thin film transistor, the first semiconductor pattern includes silicon, and the second semiconductor pattern includes an oxide semiconductor pattern, and the second gate electrode includes lower and upper electrodes.

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Abstract: A display apparatus in which a thin film transistor includes an oxide semiconductor pattern is disclosed. A gate electrode of the thin film transistor can overlap a channel region of the oxide semiconductor pattern. The gate electrode can have a structure in which a hydrogen barrier layer and a low-resistance electrode layer are stacked. A light-emitting device and an encapsulating element can be sequentially stacked on the thin film transistor. A thickness of the hydrogen barrier layer can be determined by a content of hydrogen per unit area of the encapsulating element. Thus, in the display apparatus, the characteristics deterioration of the thin film transistor due to hydrogen diffused from the encapsulating element can be prevented.

Abstract: In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.

Abstract: Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract: Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

Abstract: Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract: In one aspect, the present disclosure relates to a method of processing a thin film including, while advancing a thin film in a first selected direction, irradiating a first region of the thin film with a first laser pulse and a second laser pulse, each laser pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the first region re-solidifying and crystallizing to form a first crystallized region, and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, each pulse providing a shaped beam and having a fluence that is sufficient to partially melt the thin film and the second region re-solidifying and crystallizing to form a second crystallized region, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse.

Abstract: The disclosed systems and method for non-periodic pulse sequential lateral solidification relate to processing a thin film. The method for processing a thin film, while advancing a thin film in a selected direction, includes irradiating a first region of the thin film with a first laser pulse and a second laser pulse and irradiating a second region of the thin film with a third laser pulse and a fourth laser pulse, wherein the time interval between the first laser pulse and the second laser pulse is less than half the time interval between the first laser pulse and the third laser pulse. In some embodiments, each pulse provides a shaped beam and has a fluence that is sufficient to melt the thin film throughout its thickness to form molten zones that laterally crystallize upon cooling. In some embodiments, the first and second regions are adjacent to each other. In some embodiments, the first and second regions are spaced a distance apart.

Abstract: A method of making a crystalline film includes providing a film comprising seed grains of a selected crystallographic surface orientation on a substrate; irradiating the film using a pulsed light source to provide pulsed melting of the film under conditions that provide a mixed liquid/solid phase and allowing the mixed solid/liquid phase to solidify under conditions that provide a textured polycrystalline layer having the selected surface orientation. One or more irradiation treatments may be used. The film is suitable for use in solar cells.

Abstract: Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same are described. A display device includes a plurality of thin film transistors (TFTs) on a substrate, such that the TFTs are spaced apart from each other and each include a channel region that has a crystalline microstructure and a direction along which a channel current flows. The channel region of each of the TFTs contains a crystallographic grain that spans the length of that channel region along its channel direction. Each crystallographic grain in the channel region of each of the TFTs is physically disconnected from and crystallographically uncorrelated with each crystallographic grain in the channel region of each adjacent TFT.

Abstract: A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.

Abstract: An optic mask for crystallizing amorphous silicon comprises a first slit region including a plurality of slits regularly arranged for defining incident region of laser beam, wherein the slits of the first slit region are formed to slope by a predetermined angle to the direction of transfer of the optic mask in crystallization process, and wherein the slits of the first slit region includes a first slit having a first length and a second slit having a second length which is longer than the first length.

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.

Abstract: In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.