Abstract: An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.