Abstract: A raw material composition for producing oxygen carriers includes a first component which is one or more of nickel oxide and nickel hydroxide and a second component which is one or more of boehmite, cerium oxide, cerium hydroxide, magnesium oxide, magnesium hydroxide, and titanium oxide, wherein, when the first component is nickel oxide, the second component includes cerium hydroxide. Such a raw material composition for producing oxygen carriers of the present invention is formed into oxygen carriers according to an oxygen carrier producing method, which will be described below, by adjusting the composition, formulation of raw materials, and degree of homogenization. Then, it is possible to produce oxygen carriers having physical properties such as a shape, a particle size, and a particle distribution suitable for a fluidized bed process or a high speed fluidized bed process and having improved wear-resistance, long-term durability, and oxygen transfer performance.

Abstract: A carbon dioxide separator includes an absorption tower for producing a carbon dioxide-rich absorbent and a carbon dioxide-depleted flue gas by reaction of a carbon dioxide-containing flue gas and an absorbent contained therein; a regeneration tower for removing the carbon dioxide-rich absorbent transferred from the absorption tower in the presence of the flowing gas to separate the same into a carbon dioxide-rich treatment gas and a carbon dioxide-lean absorbent; and a separation membrane module for selectively membrane-separating and concentrating the carbon dioxide, wherein the carbon dioxide-containing flue gas is transferred to the absorption tower as a carbon dioxide-lean flue gas obtained via the separation membrane module, and the flowing gas is transferred to the regeneration tower as the carbon dioxide-rich flue gas obtained via the separation membrane module from the carbon dioxide-containing flue gas.

Abstract: A method of automatically distinguishing absorption or non-absorption of whole blood or blood plasma by using a reflective photosensor in an automatic immunoassay device including a round cartridge which may simultaneously perform the centrifugation and automatic analysis of a blood sample and a tip which may be moved up, down, left and right based on the round cartridge, the method includes: installing the reflective photosensor below the round cartridge; mounting the tip above the round cartridge, and continuously measuring blood non-absorption data in a range including a position where the blood is absorbed by using the reflective photosensor, collecting the measured data and storing the collected data while the tip is raised; continuously measuring blood absorption data by using the reflective photosensor while the tip is lowered and absorbs the blood present in the range including the position where the blood is absorbed from the round cartridge; and determining whether a type of the blood is whole blood

Abstract: The present invention relates to a carbon dioxide absorbent used for absorbing carbon dioxide, a carbon dioxide absorbent composition used for producing the carbon dioxide absorbent, and a solid raw material for a carbon dioxide absorbent included in the carbon dioxide absorbent.

Abstract: A carbon dioxide separator includes an absorption tower for producing a carbon dioxide-rich absorbent and a carbon dioxide-depleted flue gas by reaction of a carbon dioxide-containing flue gas and an absorbent contained therein; a regeneration tower for removing the carbon dioxide-rich absorbent transferred from the absorption tower in the presence of the flowing gas to separate the same into a carbon dioxide-rich treatment gas and a carbon dioxide-lean absorbent; and a separation membrane module for selectively membrane-separating and concentrating the carbon dioxide, wherein the carbon dioxide-containing flue gas is transferred to the absorption tower as a carbon dioxide-lean flue gas obtained via the separation membrane module, and the flowing gas is transferred to the regeneration tower as the carbon dioxide-rich flue gas obtained via the separation membrane module from the carbon dioxide-containing flue gas.

Abstract: The present invention relates to a carbon dioxide absorbent used for absorbing carbon dioxide, a carbon dioxide absorbent composition used for producing the carbon dioxide absorbent, and a solid raw material for a carbon dioxide absorbent included in the carbon dioxide absorbent.

Abstract: A raw material composition for producing oxygen carriers includes a first component which is one or more of nickel oxide and nickel hydroxide and a second component which is one or more of boehmite, cerium oxide, cerium hydroxide, magnesium oxide, magnesium hydroxide, and titanium oxide, wherein, when the first component is nickel oxide, the second component includes cerium hydroxide. Such a raw material composition for producing oxygen carriers of the present invention is formed into oxygen carriers according to an oxygen carrier producing method, which will be described below, by adjusting the composition, formulation of raw materials, and degree of homogenization. Then, it is possible to produce oxygen carriers having physical properties such as a shape, a particle size, and a particle distribution suitable for a fluidized bed process or a high speed fluidized bed process and having improved wear-resistance, long-term durability, and oxygen transfer performance.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

Abstract: In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.

Abstract: Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

Abstract: In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.

Abstract: In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.

Abstract: An image sensor includes a logic region and an APS region having a first gate electrode, a photo-detector, a first protecting layer, first spacers, and a second protecting layer. The first gate electrode is formed over a semiconductor substrate. The photo-detector is formed to a side of the first gate electrode within the semiconductor substrate. The first protecting layer is formed over the first gate electrode and the photo-detector. The first spacers are formed over the first protecting layer to the sides of the first gate electrode. The second protecting layer is formed over the first protecting layer and the spacers. The first and second protecting layers are for preventing a contaminant from reaching the photo-detector.

Abstract: Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.

Abstract: CMOS image sensors and methods of fabricating the same. The CMOS image sensors include a pixel array region having an active pixel portion and an optical block pixel portion which encloses the active pixel portion. The optical block pixel portion includes an optical block metal pattern for blocking light. The optical block metal pattern may be connected to a ground portion.

Abstract: Complementary metal-oxide semiconductor (CMOS) image sensors (CIS) and methods of manufacturing the same are provided, the sensors include an epitaxial layer on a substrate in which a first, second, third and fourth region are defined. A photodiode may be formed at an upper portion of the epitaxial layer in the first region. A plurality of gate structures may be formed on the epitaxial layer in the second, third and fourth regions. A first blocking layer may be formed on the gate structures and the epitaxial layer in the first and second regions. A first impurity layer may be formed at an upper portion of the epitaxial layer adjacent to the gate structures in the second region, and a second impurity layer at upper portions of the epitaxial layer adjacent to the gate structures in the third and fourth regions. A color filter layer may be formed over the photodiode. A microlens may be formed on the color filter layer.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.

Abstract: A pixel of an image sensor includes a polysilicon layer, and an active region which needs to be electrically coupled with the polysilicon layer, wherein the polysilicon layer extends over a portion of the active region, such that the polysilicon layer and the active region are partially overlapped, and the polysilicon layer and the active region are coupled through a buried contact structure.