Abstract: A thin film transistor and a method of making the same. The TFT comprises: an insulation substrate; a first TFT, the first TFT including a first source electrode and a first drain electrode formed on the insulation substrate, a first active layer formed so that it is contacted with the first source electrode and the first drain electrode and a common gate electrode formed through an insulation layer on the first source electrode, the first drain electrode and the first active layer; and a second TFT, the second TFT including the common gate electrode, a second active layer formed through an insulation layer on the common gate electrode, a second source electrode and a second drain electrode formed on the second active layer and be contacted with the first source electrode and the first drain electrode at a portion thereof.