Patents by Inventor U In Chung

U In Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8803266
    Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: August 12, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwang-seok Kim, U-In Chung, Jai-kwang Shin, Kee-won Kim, Sung-chul Lee, Ung-hwan Pi
  • Patent number: 8263449
    Abstract: A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, U-In Chung, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, In-jun Hwang
  • Publication number: 20120139069
    Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 7, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-seok Kim, U-In Chung, Jai-kwang Shin, Kee-won Kim, Sung-chul Lee, Ung-hwan Pi
  • Patent number: 7459359
    Abstract: A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.
    Type: Grant
    Filed: November 6, 2006
    Date of Patent: December 2, 2008
    Assignee: Samsung Electronic Co., Ltd.
    Inventors: Tai-Su Park, Eui-Joon Yoon, U-In Chung, Si-Young Choi, Jong-Ho Lee
  • Publication number: 20070215959
    Abstract: A semiconductor device may include a semiconductor substrate, first and second source/drain regions on a surface of the semiconductor substrate, and a channel region on the surface of the semiconductor substrate with the channel region between the first and second source/drain regions. An insulating layer pattern may be on the channel region, a first conductive layer pattern may be on the insulating layer, and a second conductive layer pattern may be on the first conductive layer pattern. The insulating layer pattern may be between the first conductive layer pattern and the channel region, and the first conductive layer pattern may include boron doped polysilicon with a surface portion having an accumulation of silicon boronide. The first conductive layer pattern may be between the second conductive layer pattern and the insulating layer pattern, and the second conductive layer pattern may include tungsten. Related methods are also discussed.
    Type: Application
    Filed: March 5, 2007
    Publication date: September 20, 2007
    Inventors: Jin-Wook Lee, Chang-Woo Ryoo, Tai-Su Park, U-In Chung, Yu-Gyun Shin
  • Publication number: 20070134415
    Abstract: An oxidation treatment apparatus for oxidizing a surface of a substrate includes a process chamber for performing a process, a boat supporting the substrate and disposed in the process chamber during the process and a first ozone supply unit supplying ozone to the process chamber. The first ozone supply unit includes an ozone generator disposed at an exterior of the process chamber and an ozone spray nozzle disposed in the process chamber to spray the ozone supplied from the ozone generator into the process chamber.
    Type: Application
    Filed: November 28, 2006
    Publication date: June 14, 2007
    Inventors: Ki-Hyun Hwang, U-In Chung, Yu-Gyun Shin, Jae-Young Ahn, Jin-Gyun Kim
  • Publication number: 20070066018
    Abstract: A method of forming a field effect transistor includes forming a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and forming an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The method may also include forming a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, forming a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and forming a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction.
    Type: Application
    Filed: November 6, 2006
    Publication date: March 22, 2007
    Inventors: Tai-Su Park, Eui-Joon Yoon, U-In Chung, Si-Young Choi, Jong-Ho Lee
  • Patent number: 7148541
    Abstract: A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.
    Type: Grant
    Filed: February 17, 2004
    Date of Patent: December 12, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tai-su Park, Eui-Joon Yoon, U-In Chung, Si-Young Choi, Jong-Ho Lee
  • Publication number: 20050145932
    Abstract: A field effect transistor can include a vertical channel protruding from a substrate including a source/drain region junction between the vertical channel and the substrate, and an insulating layer extending on a side wall of the vertical channel toward the substrate to beyond the source/drain region junction. The transistor can also include a nitride layer extending on the side wall away from the substrate to beyond the insulating layer, a second insulating layer extending on the side wall that is separated from the channel by the nitride layer, and a gate electrode extending on the side wall toward the substrate to beyond the source/drain region junction. Related methods are also disclosed.
    Type: Application
    Filed: February 17, 2004
    Publication date: July 7, 2005
    Inventors: Tai-su Park, Eui-Joon Yoon, U-In Chung, Si-Young Choi, Jong-Ho Lee
  • Patent number: 6642105
    Abstract: A semiconductor device having multi-gate insulating layers and methods of fabricating the same are provided. The semiconductor device includes an isolation region disposed at a predetermined region of a semiconductor substrate. The isolation region defines at least one first active region and at least one second active region. The first active region is covered with a first gate insulating layer, and the second active region is covered with a second gate insulating layer which is thinner than the first gate insulating layer. Preferably, the top surface of the first gate insulating layer has the same height as the that of the second gate insulating layer. The isolation region is filled with an isolation layer which preferably covers the entire sidewalls of the first and second gate insulating layers. A typical method includes the step of selectively forming a first gate insulating layer at a predetermined region of a semiconductor substrate.
    Type: Grant
    Filed: April 24, 2002
    Date of Patent: November 4, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung-Hyun Kim, Chang-Ki Hong, U-In Chung, Bum-Soo Kim, Yoo-Cheol Shin, Kyu-Chan Park
  • Publication number: 20020119615
    Abstract: A semiconductor device having multi-gate insulating layers and methods of fabricating the same are provided. The semiconductor device includes an isolation region disposed at a predetermined region of a semiconductor substrate. The isolation region defines at least one first active region and at least one second active region. The first active region is covered with a first gate insulating layer, and the second active region is covered with a second gate insulating layer which is thinner than the first gate insulating layer. Preferably, the top surface of the first gate insulating layer has the same height as the that of the second gate insulating layer. The isolation region is filled with an isolation layer which preferably covers the entire sidewalls of the first and second gate insulating layers. A typical method includes the step of selectively forming a first gate insulating layer at a predetermined region of a semiconductor substrate.
    Type: Application
    Filed: April 24, 2002
    Publication date: August 29, 2002
    Inventors: Kyung-Hyun Kim, Chang-Ki Hong, U-In Chung, Bum-Soo Kim, Yoo-Cheol Shin, Kyu-Chan Park
  • Publication number: 20020072197
    Abstract: A method of self-aligned shallow trench isolation and a method of manufacturing a non-volatile memory using the same are disclosed. An oxide layer, a first silicon layer and a nitride layer are successively formed on a semiconductor substrate. By using a single mask, the nitride layer, first silicon layer and oxide layer are etched to form an oxide layer pattern, a first silicon layer pattern and a nitride layer pattern. Subsequently, the upper portion of the substrate adjacent to the first silicon layer pattern is etched to a trench. The first silicon layer pattern and substrate are selectively etched to protrude the oxide layer pattern. The inner surface of the trench is oxidized to form a trench thermal oxide layer. Finally, a field oxide layer that fills up the trench is formed. Since the present invention prevents the sidewalls of the first silicon layer pattern from having a positive slope, a silicon residue does not remain during a subsequent gate etching process.
    Type: Application
    Filed: June 5, 2001
    Publication date: June 13, 2002
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Man-Sug Kang, Byoung-Moon Yoon, Hee-Seok Kim, U-In Chung
  • Patent number: 6391714
    Abstract: A method for making a capacitor of a semiconductor memory device capable of providing increased capacitance without degraded resolution, as well as without the removal of any interlayer insulation layers upon formation of a lower electrode for the capacitor, wherein after formation of an access transistor on a semiconductor substrate, a first interlayer insulation layer for planarization of a surface of the semiconductor substrate and a second interlayer insulation layer for formation of the capacitor lower electrode are formed. After formation of an opening for exposing a part of an impurity diffusion region of the access transistor by etching a part of the first and second interlayer insulating layers, a spacer is formed within the opening. Further, after deposition of a conductive layer for the capacitor lower electrode onto a surface of the substrate, a planarization process is carried out until a part of the upper surface of the spacer is exposed.
    Type: Grant
    Filed: December 18, 2000
    Date of Patent: May 21, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul-Ho Shin, U In Chung
  • Publication number: 20010018787
    Abstract: A method for making a capacitor of a semiconductor memory device capable of providing increased capacitance without degraded resolution, as well as without the removal of any interlayer insulation layers upon formation of a lower electrode for the capacitor, wherein after formation of an access transistor on a semiconductor substrate, a first interlayer insulation layer for planarization of a surface of the semiconductor substrate and a second interlayer insulation layer for formation of the capacitor lower electrode are formed. After formation of an opening for exposing a part of an impurity diffusion region of the access transistor by etching a part of the first and second interlayer insulating layers, a spacer is formed within the opening. Further, after deposition of a conductive layer for the capacitor lower electrode onto a surface of the substrate, a planarization process is carried out until a part of the upper surface of the spacer is exposed.
    Type: Application
    Filed: December 18, 2000
    Publication date: September 6, 2001
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul-Ho Shin, U In Chung
  • Patent number: 5656337
    Abstract: A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
    Type: Grant
    Filed: August 31, 1994
    Date of Patent: August 12, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Seon Park, Myoung-Bum Lee, Chang-Gee Hong, Chang-Gyu Kim, U-In Chung
  • Patent number: 5560778
    Abstract: A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: October 1, 1996
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In-Seon Park, Myoung-Bum Lee, Chang-Gee Hong, Chang-Gyu Kim, U-In Chung