Patents by Inventor UiSung Jung

UiSung Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11124893
    Abstract: A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: September 21, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: WonJin Choi, JunHwan Ji, UiSung Jung, JungHan Kim, YoungJung Lee, ChanRae Cho
  • Patent number: 11085126
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: August 10, 2021
    Assignees: GlobalWafers Co., Ltd., Daevac International Co., Ltd.
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Publication number: 20200080225
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Patent number: 10577717
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: March 3, 2020
    Assignee: GLOBALWAFERS CO., LTD.
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Publication number: 20190211469
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Application
    Filed: March 13, 2019
    Publication date: July 11, 2019
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Publication number: 20190194821
    Abstract: A method is disclosed for reducing the size and density of defects in a single crystal silicon wafer. The method involves subjected a single crystal silicon ingot to an anneal prior to wafer slicing.
    Type: Application
    Filed: December 10, 2018
    Publication date: June 27, 2019
    Inventors: WonJin Choi, JunHwan Ji, UiSung Jung, JungHan Kim, YoungJung Lee, ChanRae Cho
  • Patent number: 10273596
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: April 30, 2019
    Assignees: GLOBALWAFERS CO., LTD., DAEVAC INTERNATIONAL CO., LTD.
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim
  • Publication number: 20180237948
    Abstract: A feed assembly supplies polysilicon to a growth chamber for growing a crystal ingot from a melt. An example system includes a housing having support rails for receiving one of a granular tray and a chunk tray and a feed material reservoir positioned above the support rails to selectively feed one of either the granular tray or the chunk tray. A valve mechanism and pulse vibrator are also disclosed.
    Type: Application
    Filed: August 18, 2016
    Publication date: August 23, 2018
    Applicants: SunEdison Semiconductor Limited (UEN201334164H), DAEVAC International Co., Ltd.
    Inventors: Seok Min Yun, Seong Su Park, Jun Hwan Ji, Won-Jin Choi, UiSung Jung, Young Jung Lee, Tae Su Koo, Sung-Jin Kim