Patents by Inventor Uitsu Tanaka

Uitsu Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device with a metallization structure
    Patent number: 7088001
    Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: August 8, 2006
    Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd.
    Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
  • Semiconductor integrated circuit device with a metallization structure
    Publication number: 20040207095
    Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
    Type: Application
    Filed: May 13, 2004
    Publication date: October 21, 2004
    Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
  • Method of manufacturing a multilayer metallization structure with non-directional sputtering method
    Patent number: 6764945
    Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
    Type: Grant
    Filed: April 2, 2001
    Date of Patent: July 20, 2004
    Assignees: Renesas Technology Corp., Hitachi ULSI Systems Co., Ltd.
    Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani
  • Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device
    Publication number: 20020098670
    Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
    Type: Application
    Filed: April 2, 2001
    Publication date: July 25, 2002
    Inventors: Hiroshi Ashihara, Tatsuyuki Saito, Uitsu Tanaka, Hidenori Suzuki, Hideaki Tsugane, Yasuko Yoshida, Ken Okutani